The Effects of Dopants on Surface-Energy-Driven Secondary Grain Growth in Ultrathin Si Films

1985 ◽  
Vol 54 ◽  
Author(s):  
H.-J. Kim ◽  
C. V. Thompson
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Ultrathin Films ◽  
Abnormal Grain Growth ◽  
Growth Enhancement ◽  
Grain Boundary Mobility ◽  
Additional Doping ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTSecondary or abnormal grain growth has been observed in ultrathin films of silicon (<120nm) that were heavily doped with phosphorous or arsenic. This grain growth leads to grains which are much larger than the film thickness (>50x) and which have uniform (111) texture. This abnormal grain growth is believed to be driven, in part, by surface energy minimization and hence is termed surface-energy-driven secondary grain growth.It was found that n-type dopants, phosphorous and arsenic, markedly enhance the rate of secondary grain growth as seen through a lowering of the temperature required for significant growth. On the other hand, boron (a p-type dopant) appears to neither markedly increase nor decrease the rate of grain growth. Enhancement caused by phosphorous or arsenic is thought to stem from increases in the mobility of the grain boundaries. Enhancement of grain boundary mobility was found to be compensated (reduced or eliminated) by additional doping with boron.

scholarly journals The influence of Mg and Mn content on abnormal grain growth in AA5182 type alloys

10.30544/463 ◽  
2020 ◽  
Vol 25 (04) ◽  
pp. 315-323
Author(s):  
Tamara Radetić ◽  
Miljana Popović ◽  
Bojan Gligorijević ◽  
Ana Alil ◽  
Endre Romhanji
Keyword(s):  
Cold Rolling ◽  
Grain Growth ◽  
Processing Parameters ◽  
Abnormal Grain Growth ◽  
Strong Anisotropy ◽  
Grain Boundary Mobility ◽  
Zener Pinning ◽  
Cold Rolling Reduction ◽  
Mn Content ◽  
Aa5182 Alloy

The occurrence of abnormal grain growth (AGG) in AA5182 alloy during annealing imposes severe restrictions on processing parameters and deteriorates mechanical properties. In this work, we investigated the effect of chemical composition on the appearance of abnormal grain growth by varying Mg and Mn content in the range of composition limits for standard AA5182 alloy, 4.0-5.0% Mg, and 0.2-0.5% Mn, respectively. Thermo-mechanical processing of alloys included cold rolling with reductions ranging from 40 to 85%, followed by annealing in the temperature range from 350 to 520 °C. The results showed that the rise in alloying elements content drives the onset of abnormal grain growth toward higher temperatures. The increase in the cold rolling reduction degree promotes abnormal grain growth and lowers its onset temperature. Abnormal grain growth and grain boundary mobility showed strong anisotropy related to rod-like shape and alignment of Al6Mn(Fe) dispersoids through Zener pinning.

New Understanding of Abnormal Grain Growth Approached by Solid-State Wetting along Grain Boundary or Triple Junction

2004 ◽  
Vol 467-470 ◽  
pp. 745-750 ◽  
Author(s):  
Nong Moon Hwang
Keyword(s):  
Solid State ◽  
Grain Boundary ◽  
Grain Growth ◽  
Triple Junction ◽  
Boundary Energy ◽  
Growth Front ◽  
Abnormal Grain Growth ◽  
Boundary Mobility ◽  
Grain Boundary Mobility ◽  
Mc Simulation

Although it has been generally believed that the advantage of the grain boundary mobility induces abnormal grain growth (AGG), it is suggested that the advantage of the low grain boundary energy, which favors the growth by solid-state wetting, induces AGG. Analyses based on Monte Carlo (MC) simulation show that the approach by solid-state wetting could explain AGG much better than that by grain boundary mobility. AGG by solid-state wetting is supported not only by MC simulations but also by the experimental observation of microstructure evolution near or at the growth front of abnormally growing grain. The microstructure shows island grains and solid-state wetting along grain boundary and triple junction.

scholarly journals Surface Energy Controlled Abnormal Grain Growth in Melt-quenched 6.6% Silicon Iron Ribbons

1988 ◽  
Vol 74 (6) ◽  
pp. 1044-1051
Author(s):  
Toshiro TOMIDA ◽  
Atsuki OKAMOTO ◽  
Masashi TAKAHASHI
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Silicon Iron

Crystalline Films on Amorphous Substrates by Zone Melting and Surface-Energy-Driven Grain Growth in Conjunction with Patferning

1985 ◽  
Vol 53 ◽  
Author(s):  
Henry I. Smith ◽  
M. W. Geis ◽  
C. V. Thompson ◽  
C. K. Chen
Keyword(s):  
Low Temperature ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Grain Growth ◽  
High Temperatures ◽  
Zone Melting ◽  
Si Substrates ◽  
Crystalline Films ◽  
Amorphous Substrates ◽  
Si Films

ABSTRACTTwo approaches to preparing oriented crystalline films on amorphous substrates are reviewed briefly: zone-melting recrystallization (ZMR) and surface-energy-driven grain growth (SEDGG). In both approaches patterning can be employed either to establish orientation or to control the location of defects. ZMR has been highly successful for the growth of Si films on oxidized Si substrates, but its applicability is limited by the high temperatures required. SEDGG has been investigated as a potentially universal, low temperature approach. It has been demonstrated in Si, Ge, and Au. Surface gratings favor the growth of grains with a specific in-plane orientation. In order for SEDGG to be of broad practical value, the mobility of semiconductor grain boundaries must be increased substantially. Mobility enhancement has been achieved via doping and ion bombardment.

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

1990 ◽  
Vol 204 ◽  
Author(s):  
C. Wang ◽  
C.H. Bjorkman ◽  
D.R. Lee ◽  
M.J. Williams ◽  
G. Lucovsky
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Mos Devices ◽  
Exit Port ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTWe have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

scholarly journals Texture dependent surface energy measurements on magnetostrictive alloys for abnormal grain growth modeling

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035253
Author(s):  
Michael Van Order ◽  
Suok-Min Na ◽  
Alison Flatau
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Growth Modeling ◽  
Abnormal Grain Growth

Surface-energy-driven abnormal grain growth in Cu and Ag films

2005 ◽  
Vol 242 (1-2) ◽  
pp. 55-61 ◽  
Author(s):  
Fei Ma ◽  
Jian-Min Zhang ◽  
Ke-Wei Xu
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Abnormal Grain Growth
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