Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques

1988 ◽  
Vol 53 (26) ◽  
pp. 2582-2583 ◽  
Author(s):  
Beate Spanger ◽  
U. Schiessl ◽  
A. Lambrecht ◽  
H. Böttner ◽  
M. Tacke
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Room Temperature Operation

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation

Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

1996 ◽  
Vol 35 (Part 2, No. 2A) ◽  
pp. L150-L153 ◽  
Author(s):  
Yoshihiko Hanamaki ◽  
Yoshiyuki Watanuki ◽  
Hidefumi Akiyama ◽  
Tetsuya Takeuchi ◽  
Nagaatsu Ogasawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Cavity Surface ◽  
Gaas Substrates ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation

Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasers

2005 ◽  
Vol 23 (3) ◽  
pp. 1119 ◽  
Author(s):  
C. L. Canedy ◽  
W. W. Bewley ◽  
G. I. Boishin ◽  
C. S. Kim ◽  
I. Vurgaftman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diode Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Type Ii
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