cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW

1983 ◽  
Vol 42 (11) ◽  
pp. 937-939 ◽  
Author(s):  
R. D. Burnham ◽  
C. Lindström ◽  
T. L. Paoli ◽  
D. R. Scifres ◽  
W. Streifer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Room Temperature Operation

scholarly journals Synchronously wired infrared antennas for resonant single-quantum-well photodetection up to room temperature

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Hideki T. Miyazaki ◽  
Takaaki Mano ◽  
Takeshi Kasaya ◽  
Hirotaka Osato ◽  
Kazuhiro Watanabe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

2017 ◽  
Vol 110 (6) ◽  
pp. 061104 ◽  
Author(s):  
Xin Yan ◽  
Wei Wei ◽  
Fengling Tang ◽  
Xi Wang ◽  
Luying Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser ◽  
Gaas Nanowire ◽  
Low Threshold

AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (1) ◽  
pp. 4-5 ◽  
Author(s):  
C.A. Wang ◽  
J.N. Walpole ◽  
H.K. Choi ◽  
L.J. Missaggia
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well

Visible cw single quantum well (AlGa)As diode lasers

1983 ◽  
Vol 42 (2) ◽  
pp. 134-136 ◽  
Author(s):  
C. Lindström ◽  
R. D. Burnham ◽  
D. R. Scifres
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well

scholarly journals Thermal Stability Study of Oxygen Implanted Algaas/Gaas Single Quantum Well Structures Using PhotoreflectancE

1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Room Temperature ◽  
Low Dose ◽  
Stability Study ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Annealing Conditions ◽  
Thermal Stability Of

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.

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