Nondestructive depth profiling by spectroscopic ellipsometry

1985 ◽  
Vol 47 (4) ◽  
pp. 339-341 ◽  
Author(s):  
K. Vedam ◽  
P. J. McMarr ◽  
J. Narayan
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Depth Profiling

Nondestructive Depth-Profiling of Multilayer Structures by Spectroscopic Ellipsometry

MRS Bulletin ◽  
1987 ◽  
Vol 12 (1) ◽  
pp. 21-23 ◽  
Author(s):  
K. Vedam
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Monochromatic Light ◽  
Depth Profiling ◽  
Apple Computer ◽  
Multilayer Structures ◽  
Angle Of Incidence ◽  
Reflected Light ◽  
Detector Output ◽  
On Line ◽  
Proper Design

Spectroscopic ellipsometry (SE) is the newest nondestructive and nonperturbing technique for characterizing surfaces, interfaces, and multilayer structures. The technique was originally developed and perfected by Aspnes of Bell Laboratories and a commercial instrument is currently available. After a brief description of the basic principles involved in this technique, one of its many applications — the depth profiling of multilayer structures — is described. Further details about SE and its other applications can be found elsewhere.The automated spectroscopic ellipsometer that has been built in our laboratory is based on the design of Aspnes and Studna. A schematic diagram of the instrument is shown in Figure 1. It is basically a rotating analyzer ellipsometer operated by an on-line Apple computer, and it has spectroscopic scanning capability. Plane polarized monochromatic light is allowed to be incident on the sample at a chosen angle of incidence. The characteristics of the elliptically polarized reflected light is analyzed by a rotating analyzer. As Budde has shown, Fourier analysis of the detector output in a rotating analyzer ellipsometer yields the desired ellipsometric parameters Δ and ψ characterizing the material under study. Aspnes has pointed out that with proper design, alignment and operation, the precision attained is very high, and accuracy of the data is also as high as that attainable with null ellipsometers. The results of our own studies confirm these conclusions. Such measurements are carried out at a number of discrete wavelengths (˜100) distributed uniformly in the UV-visible-near IR spectral range.

Composition Profiling of Graded Dielectric Function Materials by Spectroscopic Ellipsometry

1995 ◽  
Vol 411 ◽  
Author(s):  
S. Trolier-Mckinstry ◽  
J. Koh
Keyword(s):  
Refractive Index ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Depth Profiling ◽  
Surface Concentration ◽  
Aluminosilicate Glass ◽  
Lead Silicate ◽  
Silica Sample ◽  
Refractive Index Contrast ◽  
Index Contrast

ABSTRACTSpectroscopic ellipsometry (SE) is a powerful optical tool for non-destructively depth-profiling the dielectric function of samples with a resolution in the Ångstrom range. In this work, the characterization of graded composition layers in transparent materials by SE is described. In modeling studies on the sensitivity limits of the technique, it has been shown that for known index profile shapes, the depth sensitivity can be quite high. For example, diffusion of Na2O into the surface of a vitreous silica sample can be detected for layers as thin as 100Å when the maximum refractive index contrast is only 0.005. The sensitivity of the technique increases as the diffusion depth and refractive index contrast increases. The accuracy of the thickness determination depends on the total thickness of the graded layer; for a given system, the accuracy of the composition measurements do not depend on the surface concentration.Leached alkali-aluminosilicate and modified lead silicate glasses were examined by SE to experimentally confirm the modeling predictions on the composition depth profiling. Extremely good correlation between the SE-determined depth profile and SIMS measurements on similar samples was obtained for the case of the modified lead silicate glass. For the aluminosilicate glass, simultaneous roughening of the glass surface during etching makes composition profiling more difficult.

scholarly journals Aging of Oxygen-Treated Trimethylsilane Plasma-Polymerized Films Using Spectroscopic Ellipsometry

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Taher M. El-Agez ◽  
David M. Wieliczka ◽  
Chris Moffitt ◽  
Sofyan A. Taya
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Photoelectron Spectroscopy ◽  
Aging Process ◽  
Depth Profiling ◽  
Detailed Understanding ◽  
X Ray ◽  
Plasma Polymerized Films

Oxygen-treated trimethylsilane (TMS) plasma-polymerized films are investigated using rotating polarizer and analyzer ellipsometer. Aging process and composition of the samples are studied. Coordinated X-ray photoelectron spectroscopy (XPS) depth profiling studies on these films is presented for more detailed understanding of the aging process as well as the modeling of these films.

Nondestructive depth profiling of ZnS and MgO films by spectroscopic ellipsometry

1987 ◽  
Vol 12 (7) ◽  
pp. 456 ◽  
Author(s):  
K. Vedam ◽  
A. H. Guenther ◽  
S. Y. Kim ◽  
L. D'Aries
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Depth Profiling
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