Excimer laser enhanced nitridation of silicon substrates

1984 ◽  
Vol 45 (9) ◽  
pp. 966-968 ◽  
Author(s):  
Toshihiro Sugii ◽  
Takashi Ito ◽  
Hajime Ishikawa
Keyword(s):  
Excimer Laser ◽  
Silicon Substrates

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

KrF excimer laser deposition of titanium thin films on silicon substrates

1998 ◽  
Author(s):  
Luowen Lu ◽  
Yongfeng Lu ◽  
Minghui Hong ◽  
T. M. Ho ◽  
Tohsiew Low
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Titanium Thin Films ◽  
Krf Excimer Laser

Excimer-laser-induced micropatterning of silicon dioxide on silicon substrates

2001 ◽  
Vol 72 (1) ◽  
pp. 35-39 ◽  
Author(s):  
J.J. Yu ◽  
J.Y. Zhang ◽  
I.W. Boyd ◽  
Y.F. Lu
Keyword(s):  
Silicon Dioxide ◽  
Excimer Laser ◽  
Silicon Substrates

Laser Ablation of Pzt Films for use in Bimorph Actuator Structures

1992 ◽  
Vol 285 ◽  
Author(s):  
Johannes Frantti ◽  
H. Moilanen ◽  
S. Leppävuori ◽  
A. Uusimäki
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Nd:Yag Laser ◽  
Low Voltage ◽  
Michelson Interferometer ◽  
Laser Wavelength ◽  
Silicon Substrates ◽  
Driving Voltage ◽  
Raman Spectrometry ◽  
Pzt Films

ABSTRACTLaser ablation has been used to produce piezoelectric films for use in a low voltage cantilever bimorph actuator structure. Nd doped lead zirconium titanate (PZT) films were deposited by a pulsed Q-switched Nd:YAG laser (wavelength 1064 nm) on to unheated silver-coated oxidised silicon substrates at a distance of 30 mm between substrate and target. Growth rates were typically 20 Å/s. The as-deposited PZT films were amorphous but contained small microcrystalline pyrochlore and perovskite regions. Optimisation of the annealing conditions resulted in perovskite as the main phase (T=750°C, t=2 h). A special fabrication technique (PbO covered PZT) was used to minimise film defects mainly caused by large particles.In order to improve the density of the film and deposition rates of the ablated PZT film, ablations using an XeCl excimer laser (wavelength 308 nm) under the influence of a static magnetic field were also studied. The decreased particle size in the deposited films showed that the surface quality of the films fabricated by the excimer laser was better than that of films deposited by the Nd:YAG laser. Films were studied using EDS, XRD and also micro-Raman spectrometry.Bimorph cantilever element structures were realised using Nd:YAG laser ablation. DC bending characteristics of these low voltage cantilever bimorphs were measured as a function of voltage using a Michelson interferometer. Displacements in the order of microns were obtained from a 15 mm x 4 mm x 80 �ement with a driving voltage level of 10 V.

Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
E. Fogarassy ◽  
D. Dentel ◽  
JJ. Grob ◽  
B. Prévot ◽  
J.P. Stoquert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Initial Dose ◽  
Laser Annealing ◽  
Film Formation ◽  
Silicon Substrates ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
First Time

AbstractWe investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

Direct Oxidation of Silicon Substrates Using ArF Excimer Laser Photolysis of N2O at Low Temperatures

1990 ◽  
Vol 19 (6) ◽  
pp. 863-866 ◽  
Author(s):  
Masaharu Tsuji ◽  
Minoru Sakumoto ◽  
Hiroshi Obase ◽  
Yukio Nishimura
Keyword(s):  
Excimer Laser ◽  
Low Temperatures ◽  
Laser Photolysis ◽  
Silicon Substrates ◽  
Direct Oxidation ◽  
Arf Excimer Laser

Pulsed excimer laser deposition and characterization of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

1992 ◽  
Vol 7 (9) ◽  
pp. 2521-2529 ◽  
Author(s):  
D. Roy ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Lead Zirconate Titanate ◽  
Fatigue Behavior ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films were prepared by excimer laser ablation on platinum coated silicon substrates. The composition of the films showed dependence on the fluence at low energy densities (<2 J/cm2), and less dependence on the ablation fluence was observed beyond a fluence of 2 J/cm2. A correlation among the fluence, ablation pressure, and substrate temperature has been established. Crystalline perovskite PZT films showed a dielectric constant of 800–1000, a remnant polarization of 32 μC/cm2, and a coercive field of 130 kV/cm. Films showed fatigue behavior that may be used in a device, and a close comparison of fatigue behavior between the films deposited at different energy densities indicated a better fatigue behavior for a fluence of 4 J/cm2.

Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films

2005 ◽  
Vol 108-109 ◽  
pp. 53-58 ◽  
Author(s):  
Sofia A. Arzhannikova ◽  
M.D. Efremov ◽  
Vladimir A. Volodin ◽  
G.N. Kamaev ◽  
D.V. Marin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Excimer Laser ◽  
Silicon Nanocrystals ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Laser Treatments

The laser assisted formation of silicon nanocrystals in SiNx films deposited on quartz and silicon substrates is studied. The Raman spectroscopy revealed creation of the Si cluster and crystallite after excimer laser treatments. Photoluminescence signal from the samples was detected at room temperatures. I-V and C-V measurements were carried out to examine carries transfer through dielectrics film as well as recharging of electronics states.

Cubic boron nitride deposition on silicon substrates at room temperature by KrF excimer laser ablation of h-BN

2000 ◽  
Vol 70 (2) ◽  
pp. 197-201 ◽  
Author(s):  
S. Acquaviva ◽  
G. Leggieri ◽  
A. Luches ◽  
A. Perrone ◽  
A. Zocco ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Boron Nitride ◽  
Excimer Laser ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser
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