Excimer-laser-induced micropatterning of silicon dioxide on silicon substrates

2001 ◽  
Vol 72 (1) ◽  
pp. 35-39 ◽  
Author(s):  
J.J. Yu ◽  
J.Y. Zhang ◽  
I.W. Boyd ◽  
Y.F. Lu
Keyword(s):  
Silicon Dioxide ◽  
Excimer Laser ◽  
Silicon Substrates

The Excimer Laser-induced Ripple Structures at the Interfaces of Silicon-dioxide/Silicon Substrates

1998 ◽  
Vol 37 (Part 1, No. 6A) ◽  
pp. 3471-3474 ◽  
Author(s):  
Yong Feng Lu ◽  
Jian Jun Yu ◽  
Wee Kiong Choi
Keyword(s):  
Silicon Dioxide ◽  
Excimer Laser ◽  
Silicon Substrates

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Excimer laser enhanced nitridation of silicon substrates

1984 ◽  
Vol 45 (9) ◽  
pp. 966-968 ◽  
Author(s):  
Toshihiro Sugii ◽  
Takashi Ito ◽  
Hajime Ishikawa
Keyword(s):  
Excimer Laser ◽  
Silicon Substrates

Ultrafast UV-Laser Induced Oxidation of Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T.E. Orlowski ◽  
H. Richter
Keyword(s):  
Silicon Dioxide ◽  
Laser Excitation ◽  
Pulsed Laser ◽  
Silicon Substrates ◽  
Ir Absorption ◽  
Uv Laser ◽  
High Quality ◽  
Thermally Grown Oxides ◽  
Temperature Method ◽  
Cv Measurements

ABSTRACTA new low temperature method of forming high quality patterned silicon dioxide (SiO2) layers up to a thickness of 1 μm on silicon substrates is presented. UV pulsed laser excitation in an oxygen environment is utilized. IR absorption spectroscopy, CV and IV measurements are employed to characterize the oxide films and the Si-SiO2 interface. No shift but a significant broadening of the Si-O stretching mode compared with thermally grown oxides is found indicating that the laser grown oxide is stoichiometric but with a higher degree of disorder. From CV measurements we deduce a fixed oxide charge near the Si-SiO2 interface of 6×1010/cm2 for oxides that have been thermally annealed in O2 following the laser induced growth making this material a candidate for applications in semiconductor devices.

KrF excimer laser deposition of titanium thin films on silicon substrates

1998 ◽  
Author(s):  
Luowen Lu ◽  
Yongfeng Lu ◽  
Minghui Hong ◽  
T. M. Ho ◽  
Tohsiew Low
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Titanium Thin Films ◽  
Krf Excimer Laser
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