Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
E. Fogarassy ◽  
D. Dentel ◽  
JJ. Grob ◽  
B. Prévot ◽  
J.P. Stoquert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Initial Dose ◽  
Laser Annealing ◽  
Film Formation ◽  
Silicon Substrates ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
First Time

AbstractWe investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

2016 ◽  
Vol 439 ◽  
pp. 33-39 ◽  
Author(s):  
J.B. Rodriguez ◽  
K. Madiomanana ◽  
L. Cerutti ◽  
A. Castellano ◽  
E. Tournié
Keyword(s):  
Molecular Beam Epitaxy ◽  
Diffraction Study ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray

Laser Assisted Molecular Beam Deposition of High Mobility Zinc Oxide

2005 ◽  
Vol 891 ◽  
Author(s):  
Meiya Li ◽  
Nehal Chokshi ◽  
Robert L. DeLeon ◽  
Gary Tompa ◽  
Wayne Anderson
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
Zno Thin Films ◽  
Zno Films ◽  
Excimer Laser Annealing ◽  
Molecular Beam Deposition ◽  
Beam Deposition

ABSTRACTWe have utilized laser assisted molecular beam deposition (LAMBD) to deposite zinc oxide (ZnO) at room temperature. The production of ZnO films via LAMBD utilizes an excimer laser induced ablation plume of zinc in combination with pulsed oxygen gases to create a molecular beam of ZnO clusters. The deposited films have been characterized structually and electrically in an as deposited state as well as after post deposition excimer laser annealing. The films undergo a clear structural change from a nanoparticle like film to either a microgranular film or a smooth continuous film depending upon the laser annealing power.Al ohmic contacts were made to both as-deposited and laser-annealed ZnO thin films. Thickness and refractive index, chemical composition, and surface morphology of the thin films were analyzed by using ellipsometry, electron spectroscopy for chemical analysic (ESCA), and feild emission scanning electron microscopy (FESEM), respectively. Dark current-voltage (I-V), DC photo I-V, Hall-effect, and photoluminescence measurements were employed for testing the device performance.In some cases, the ZnO thin film was changed from n-type into p-type after laser annealing, and photoconductive behavior was clearly seen on the laser-annealed samples, with values of 2.8 × 10−4 Ω−1. Also, both samples with and without laser annealing show near-band emission at ∼3.3 eV. Furthermore, the full width at half maximum (FWHW) values of the laser-annealed LAMB ZnO film was reduced from 20.02 nm or 21.68 nm to 18.2 nm when compared with that of non-laser annealed samples. This indicates that the laser annealing provided an improved stochiometric quality and crystallinity to the ZnO thin films.

Effect of Laser-Plasma X-Ray Irradiation on Crystallization of Amorphous Silicon Film by Excimer Laser Annealing

2007 ◽  
Vol 46 (No. 44) ◽  
pp. L1061-L1063 ◽  
Author(s):  
Naoto Matsuo ◽  
Kazuya Uejukkoku ◽  
Akira Heya ◽  
Sho Amano ◽  
Yasuyuki Takanashi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
Amorphous Silicon Film

Crystallization of Si(1-yCy Films by Excimer Laser Annealing: Characterization of the Microstructure of the Films

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
J. L. Stehle ◽  
E. Fogarassy ◽  
J. J. Grob ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Carbide Formation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Excimer Laser Annealing ◽  
Lattice Contraction ◽  
Complex Behaviour ◽  
Before And After

AbstractEpitaxial Si(1-y)Cy substitutional alloy layers are prepared on monocrystalline silicon substrates by carbon multiple energy ion implantation followed by XeCl excimer laser annealing on large surfaces. Structural analysis of the films before and after laser annealing are made very precisely using spectroscopie ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2J/cm2 result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behaviour is observed with partial (or total) relaxation of the layer and/or carbide formation‥

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

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