Laser Ablation of Pzt Films for use in Bimorph Actuator Structures

1992 ◽  
Vol 285 ◽  
Author(s):  
Johannes Frantti ◽  
H. Moilanen ◽  
S. Leppävuori ◽  
A. Uusimäki
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Nd:Yag Laser ◽  
Low Voltage ◽  
Michelson Interferometer ◽  
Laser Wavelength ◽  
Silicon Substrates ◽  
Driving Voltage ◽  
Raman Spectrometry ◽  
Pzt Films

ABSTRACTLaser ablation has been used to produce piezoelectric films for use in a low voltage cantilever bimorph actuator structure. Nd doped lead zirconium titanate (PZT) films were deposited by a pulsed Q-switched Nd:YAG laser (wavelength 1064 nm) on to unheated silver-coated oxidised silicon substrates at a distance of 30 mm between substrate and target. Growth rates were typically 20 Å/s. The as-deposited PZT films were amorphous but contained small microcrystalline pyrochlore and perovskite regions. Optimisation of the annealing conditions resulted in perovskite as the main phase (T=750°C, t=2 h). A special fabrication technique (PbO covered PZT) was used to minimise film defects mainly caused by large particles.In order to improve the density of the film and deposition rates of the ablated PZT film, ablations using an XeCl excimer laser (wavelength 308 nm) under the influence of a static magnetic field were also studied. The decreased particle size in the deposited films showed that the surface quality of the films fabricated by the excimer laser was better than that of films deposited by the Nd:YAG laser. Films were studied using EDS, XRD and also micro-Raman spectrometry.Bimorph cantilever element structures were realised using Nd:YAG laser ablation. DC bending characteristics of these low voltage cantilever bimorphs were measured as a function of voltage using a Michelson interferometer. Displacements in the order of microns were obtained from a 15 mm x 4 mm x 80 �ement with a driving voltage level of 10 V.

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Pulsed excimer laser deposition and characterization of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

1992 ◽  
Vol 7 (9) ◽  
pp. 2521-2529 ◽  
Author(s):  
D. Roy ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Lead Zirconate Titanate ◽  
Fatigue Behavior ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films were prepared by excimer laser ablation on platinum coated silicon substrates. The composition of the films showed dependence on the fluence at low energy densities (<2 J/cm2), and less dependence on the ablation fluence was observed beyond a fluence of 2 J/cm2. A correlation among the fluence, ablation pressure, and substrate temperature has been established. Crystalline perovskite PZT films showed a dielectric constant of 800–1000, a remnant polarization of 32 μC/cm2, and a coercive field of 130 kV/cm. Films showed fatigue behavior that may be used in a device, and a close comparison of fatigue behavior between the films deposited at different energy densities indicated a better fatigue behavior for a fluence of 4 J/cm2.

scholarly journals Photoexcitation in thin films deposited on silicon substrates by reactive pulsed laser ablation

2001 ◽  
Vol 3 (4) ◽  
pp. 213-216 ◽  
Author(s):  
A. Giardini Guidoni ◽  
V. Marotta ◽  
S. Orlando ◽  
G. P. Parisi
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Wavelength ◽  
Physical Parameters ◽  
Silicon Substrates ◽  
Halogen Lamp ◽  
Simultaneous Exposure ◽  
Flight Mass Spectrometry

Reactive pulsed laser ablation is a very interesting method to deposit thin films of several materials and compounds such as oxides, nitrides, semiconductors and superconductors. This technique relies on photoablation of pure elements, or a mixture of materials, with simultaneous exposure to a reactive atmosphere. In the case of oxides, reactions between the laser vaporized metals and oxygen lead to the formation of intermediate complexes and finally to oxide thin films. The reactivity of the plume has been already studied by our group in other oxides and nitrides productions and ascertained by Time of Flight Mass Spectrometry measurements [1].Thin films of semiconducting oxides such asIn2O3,SnO2, and multilayers of these two compounds have been deposited by Reactive Pulsed Laser Ablation, with the aim to evaluate the behaviour of such films under variable halogen lamp illumination.Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (wavelength = 532 nm) on Silicon (100) substrates. A comparison, among indium oxide, tin oxide, and multilayers of indium and tin oxides, has been performed. The influence of physical parameters, such as substrate temperature and oxygen pressure in the deposition chamber, has been investigated. The deposited films have been characterized by Electric Resistance measurements.

Cubic boron nitride deposition on silicon substrates at room temperature by KrF excimer laser ablation of h-BN

2000 ◽  
Vol 70 (2) ◽  
pp. 197-201 ◽  
Author(s):  
S. Acquaviva ◽  
G. Leggieri ◽  
A. Luches ◽  
A. Perrone ◽  
A. Zocco ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Boron Nitride ◽  
Excimer Laser ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

PbZr0.52Ti0.48O3 Ferroelectric Thin Films on Silicon by KrF Excimer Laser Ablation

1999 ◽  
Vol 604 ◽  
Author(s):  
K. Ebihara ◽  
F. Mitsugi ◽  
M. Yamazato ◽  
T. Ikegami ◽  
J. Narayan
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Remanent Polarization ◽  
Laser Energy ◽  
Ybco Superconductor ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Diffraction Patterns ◽  
Krf Excimer Laser

AbstractThe Au / PbZrxTi1-xO3 (PZT) ferroelectrics / YBa2Cu3O7-x (YBCO) superconductor / yttria-stabilized zirconia (YSZ) heterostructures were prepared on Si (100) substrate by KrF excimer laser ablation technique. The x-ray diffraction patterns showed that the PZT films prepared on YBCO / YSZ /Si at 550°C, O2 100 mTorr and a laser energy density of 2 J/cm2(5Hz) are pure perovskite and highly oriented with the (00l) orientation. The polarization (P)-electric field (E) characteristics showed the remanent polarization Pr of 23 µC/cm2 and coercive field Ec, of 35 kV/cm. Pr of the PZT capacitor degraded to one half of initial value after about 1010 switching cycles (50 kHz).

Studies of excimer laser ablation of solids using a Michelson interferometer

1986 ◽  
Vol 48 (24) ◽  
pp. 1690-1692 ◽  
Author(s):  
R. E. Walkup ◽  
J. M. Jasinski ◽  
R. W. Dreyfus
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Michelson Interferometer ◽  
Excimer Laser Ablation
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