Reactivity and interface chemistry during Schottky‐barrier formations: Metals on thin native oxides of GaAs investigated by x‐ray photoelectron spectroscopy

1981 ◽  
Vol 38 (3) ◽  
pp. 167-169 ◽  
Author(s):  
Steven P. Kowalczyk ◽  
J. R. Waldrop ◽  
R. W. Grant
1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.


2011 ◽  
Vol 14 (12) ◽  
pp. H478 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
J. Bielefeld ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
...  

1979 ◽  
Vol 126 (10) ◽  
pp. 1737-1749 ◽  
Author(s):  
G. P. Schwartz ◽  
G. J. Gualtieri ◽  
G. W. Kammlott ◽  
B. Schwartz

2011 ◽  
Vol 99 (20) ◽  
pp. 202903 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
B. French

1988 ◽  
Vol 52 (25) ◽  
pp. 2133-2135 ◽  
Author(s):  
Yoshimine Kato ◽  
Shoichi Kurita

2009 ◽  
Vol 15 (S2) ◽  
pp. 176-177
Author(s):  
TS Nunney ◽  
O Mustonen ◽  
RG White

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


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