Native oxides on etched Zn3P2surfaces studied by x‐ray photoelectron spectroscopy

1988 ◽  
Vol 52 (25) ◽  
pp. 2133-2135 ◽  
Author(s):  
Yoshimine Kato ◽  
Shoichi Kurita
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Native Oxides

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

An X‐Ray Photoelectron Spectroscopy Study of Native Oxides on GaAs

1979 ◽  
Vol 126 (10) ◽  
pp. 1737-1749 ◽  
Author(s):  
G. P. Schwartz ◽  
G. J. Gualtieri ◽  
G. W. Kammlott ◽  
B. Schwartz
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Native Oxides

Low Temperature Cleaning of Ge and GaAs Surfaces Using Hydrogen Dissociated with a Remote Noble-Gas Discharge

1989 ◽  
Vol 165 ◽  
Author(s):  
S. V Hatitangady ◽  
R. A. Rudder ◽  
M. J. Mantini ◽  
G. G. Fountain ◽  
J. B. Posthill ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
High Energy ◽  
Plasma Cvd ◽  
X Ray ◽  
Native Oxides ◽  
Novel Structure ◽  
Reconstructed Surfaces ◽  
Mis Structures

AbstractThe native oxides of Ge and GaAs have long been known to preclude the formation of suitable MIS structures. In situ cleaning of Ge and GaAs surfaces has been achieved at 300–375 °C using a novel technique employing hydrogen that is dissociated using a remote Ar discharge. Such a technique circumvents the problems of cross contamination introduced from a directly excited hydrogen discharge due to erosion of the quartz tube walls by the active hydrogen. Reconstructed surfaces characteristic of clean Ge and GaAs surfaces have been observed with Reflection High Energy Electron Diffraction (RHEED) following such a treatment. Auger and X-ray Photoelectron Spectroscopy (XPS) analyses show that such a treatment removes both oxygen and carbon contamination from the surface. XPS window scans on the Ga-3d and the As-3d peaks show that the treatment is successful in removing oxygen bonded to both Ga and As on the GaAs surface.Following the in situ cleaning, excellent MIS structures on Ge and GaAs have been realized with a novel structure that utilizes an ultra-thin Si interlayer (1.5 nm) between the insulator-oxide and the clean semicondutor surface. The Si interlayer prevents any sub-cutaneous oxidation of the underlying semiconductor while exploiting the advantages of the excellent Si-SiO2 interface. The entire structure is fabricated in a single-chamber remote plasma CVD unit.

Characterization of thin Chemical/Native Oxides on Si (100) by Auger and Angle-Resolved XPS

1993 ◽  
Vol 318 ◽  
Author(s):  
Eddie D. Pylant ◽  
Carolyn F. Hoener ◽  
Mark F. Arendt ◽  
Bob Witowski
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Depth Distribution ◽  
Oxidation States ◽  
State Distribution ◽  
X Ray ◽  
Depth Profiles ◽  
Native Oxides ◽  
Target Factor Analysis

ABSTRACTChemical/native oxides grown on Si(100) after several standard wet cleans are characterized by Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS), and Auger Electron Spectroscopy using sputter depth profiles. Target Factor Analysis (TFA) was used to separate the Si LVV Auger peak into three components identified by their lineshapes and positions as Si, SiO2, and SiOx- Auger depth profiles were used to quantify the thickness of the oxides, the depth distribution, and amount of SiOx in the interface region. ARXPS was used to study the chemical state distribution in the native oxides as a function of depth. The depth distribution function from the Auger data was converted to an angle-resolved format for direct comparison to the angle-resolved XPS data. With this comparison, the SiOx lineshape is correlated to a 3:1 mixture of Si 3+ and Si 2+ oxidation states.

Microstructure and Properties of Native Insulators Formed on Single Crystal Germanium

1985 ◽  
Vol 54 ◽  
Author(s):  
O. J. Gregory ◽  
E. E. Crisman ◽  
J. Severns ◽  
P. J. Stiles
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hexagonal Phase ◽  
Far Infrared ◽  
Infrared Transmission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Native Oxides ◽  
Β Phase ◽  
Transmission Electron ◽  
Scanning Transmission

ABSTRACTThe phases, morphologies and microstructures of native oxides and nitrides, grown on the vicinal planes of germanium, are discussed. Thermal oxides, formed under high pressure, were shown to be primarily amorphous for (100) and (110) oriented substrates and intermixed with a crystalline hexagonal phase on the (111) surfaces. Thermal treatments, in one atmosphere of flowing ammonia gas, converted oxide films to mixtures of nitrides and oxynitrides with the nitrides found to be combinations of a- and β-Ge3N4. The α-phase formed from condensation of vapors above the surface whereas the β-phase was a solid-solid reaction product which initiates at the oxide/germanium interface. These two processes appeared to proceed independently of each other. Results of low angle X-ray diffraction (XRD), far infrared transmission (FIRT), scanning transmission electron microscopy (STEM) and X-ray photoelectron spectroscopy (XPS) are discussed.

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