X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

2011 ◽  
Vol 99 (20) ◽  
pp. 202903 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
B. French
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Low K

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

X-ray Photoelectron Spectroscopy Investigation of the Schottky Barrier at a-BN:H∕Cu Interfaces

2011 ◽  
Vol 14 (12) ◽  
pp. H478 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
J. Bielefeld ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray

A novel low k thin film based on plasma-polymerized 1- cyano isoquinoline

e-Polymers ◽  
2007 ◽  
Vol 7 (1) ◽  
Author(s):  
Zhao Xiong-Yan ◽  
Wang Ming-Zhu ◽  
Wang Zhi
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Film Formation ◽  
Ring Structure ◽  
Discharge Power ◽  
Low Dielectric Constant ◽  
X Ray ◽  
Low Dielectric ◽  
First Time ◽  
Low K

AbstractA novel low dielectric constant polymer, plasma-polymerized 1-cyano isoquinoline (PPCIQ) was prepared by plasma polymerization for the first time. The structure and surface compositions of the deposited PPCIQ thin films were investigated by Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that a high retention of the aromatic ring structure of the starting monomer in the deposited plasma films is obtained when a low discharge power of 15 W was used during film formation. In the case of higher discharge power of 35 W, more severe monomer molecular fragmentation can be observed. The dielectric properties measurements show that a low dielctric constant of 2.62 can be obtained for PPCIQ thin film deposited at 15 W.

Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy

2012 ◽  
Vol 100 (20) ◽  
pp. 201606 ◽  
Author(s):  
M. Gaowei ◽  
E. M. Muller ◽  
A. K. Rumaiz ◽  
C. Weiland ◽  
E. Cockayne ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Barrier Heights

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

2021 ◽  
Author(s):  
Wei Mao ◽  
shihao Xu ◽  
Haiyong Wang ◽  
Cui Yang ◽  
ShengLei Zhao ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Surface Oxide Layer ◽  
Schottky Barrier Diodes ◽  
X Ray ◽  
Current Collapse ◽  
Effect Of Oxygen

Abstract The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

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