X-ray Photoelectron Spectroscopy Investigation of the Schottky Barrier at a-BN:H∕Cu Interfaces

2011 ◽  
Vol 14 (12) ◽  
pp. H478 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
J. Bielefeld ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray

X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

2011 ◽  
Vol 99 (20) ◽  
pp. 202903 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
B. French
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Low K

Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy

2012 ◽  
Vol 100 (20) ◽  
pp. 201606 ◽  
Author(s):  
M. Gaowei ◽  
E. M. Muller ◽  
A. K. Rumaiz ◽  
C. Weiland ◽  
E. Cockayne ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Barrier Heights

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

2021 ◽  
Author(s):  
Wei Mao ◽  
shihao Xu ◽  
Haiyong Wang ◽  
Cui Yang ◽  
ShengLei Zhao ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Surface Oxide Layer ◽  
Schottky Barrier Diodes ◽  
X Ray ◽  
Current Collapse ◽  
Effect Of Oxygen

Abstract The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

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