The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon

1981 ◽  
Vol 38 (11) ◽  
pp. 865-866 ◽  
Author(s):  
H. Norde ◽  
J. de Sousa Pires ◽  
F. d’Heurle ◽  
F. Pesavento ◽  
S. Petersson ◽  
...  
Keyword(s):  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Rare Earth Metals ◽  
Type Silicon

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

2010 ◽  
Vol 49 (5) ◽  
pp. 055701 ◽  
Author(s):  
Ying-Ying Zhang ◽  
Soon-Yen Jung ◽  
Jungwoo Oh ◽  
Hong-Sik Shin ◽  
Se-Kyung Oh ◽  
...  
Keyword(s):  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Rare Earth Metals

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

scholarly journals EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON

Doklady BGUIR ◽  
2020 ◽  
pp. 81-88
Author(s):  
Ja. A. Solovjov ◽  
V. A. Pilipenko
Keyword(s):  
Thermal Treatment ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Specific Resistance ◽  
Light Flux ◽  
Nickel Film ◽  
Electrophysical Properties ◽  
Nickel Films ◽  
Type Silicon

Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C. Nickel films of about 60 nm thickness were deposited by magnetron sputtering onto the silicon substrates having a resistivity of 0.58 to 0.53 Ohms×cm. The rapid thermal treatment was carried out in the range of 200 to 550 °C under heat balance mode by irradiating the backside of the substrates with non-coherent light flux in nitrogen ambient for 7 seconds. The thickness of the nickel films was determined by scanning electron microscopy. The sheet resistance of the samples was measured by a four-probe method. The Schottky barrier height was determined from I-V plots. It is shown that at a temperatureы of rapid thermal treatment of Ni/n-Si (111) 200–250 °C nickel will be transformed to Ni2Si, increasing in thickness by 1.15–1.33 times, specific resistance increases to 26–30 μOhm×cm, and Schottky barrier height decreases from 0.66 to 0.6 V. At a rapid thermal treatment temperature of 300°C the initial nickel film thickness increases by 1.93 times, the resistivity and Schottky barrier height decrease to 26–30 μOhm×cm and 0.59 V respectively due to the conversion of the Ni2Si into NiSi and the fixation of the barrier height by surface states at the silicidesilicon interface. Rapid thermal treatment of 350–550 °C transforms the original nickel film into NiSi, increases its thickness by 2.26–2.67 times, reduces its resistivity to 15–18 μOhm×cm and increases the Schottky barrier height to 0.62–0.64 V. The minimum defects and better reproducibility of electrophysical properties are characterized by NiSi films formed by rapid thermal treatment of nickel films on n-type silicon at a temperature of 400–450 °C. The results obtained can be used in the technology of integrated electronics products containing rectifying contacts.

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