Low Schottky barrier height contacts ton‐CdTe using rare‐earth metals

1996 ◽  
Vol 79 (11) ◽  
pp. 8541-8548 ◽  
Author(s):  
D. Brun‐Le Cunff ◽  
B. Daudin
Keyword(s):  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Rare Earth Metals

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

2010 ◽  
Vol 49 (5) ◽  
pp. 055701 ◽  
Author(s):  
Ying-Ying Zhang ◽  
Soon-Yen Jung ◽  
Jungwoo Oh ◽  
Hong-Sik Shin ◽  
Se-Kyung Oh ◽  
...  
Keyword(s):  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Rare Earth Metals

The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon

1981 ◽  
Vol 38 (11) ◽  
pp. 865-866 ◽  
Author(s):  
H. Norde ◽  
J. de Sousa Pires ◽  
F. d’Heurle ◽  
F. Pesavento ◽  
S. Petersson ◽  
...  
Keyword(s):  
Rare Earth ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Rare Earth Metals ◽  
Type Silicon

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode
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