Determination of hafnium‐p‐type silicon Schottky barrier height

1974 ◽  
Vol 45 (6) ◽  
pp. 2792-2794 ◽  
Author(s):  
M. Beguwala ◽  
C. R. Crowell
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Type Silicon ◽  
P Type

Schottky Barrier Height andS-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN

2012 ◽  
Vol 51 (9S2) ◽  
pp. 09MK01 ◽  
Author(s):  
Youngjun Park ◽  
Kwang-Soon Ahn ◽  
Hyunsoo Kim
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
P Type

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

scholarly journals Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1674 ◽  
Author(s):  
Xuefei Liu ◽  
Zhaofu Zhang ◽  
Zijiang Luo ◽  
Bing Lv ◽  
Zhao Ding
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Tensile Strain ◽  
Schottky Barrier Height ◽  
Strain Engineering ◽  
Nitrogen Vacancy ◽  
First Principles Calculation ◽  
Type Contact ◽  
P Type

The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.

Electronic transport and Schottky barrier height of Ni contact on p-type GaN

2008 ◽  
Vol 41 (9) ◽  
pp. 095107 ◽  
Author(s):  
Yow-Jon Lin ◽  
Ching-Ting Lee ◽  
Shih-Sheng Chang ◽  
Hsing-Cheng Chang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electronic Transport ◽  
Schottky Barrier Height ◽  
P Type
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