Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy

1999 ◽  
Vol 568 ◽  
Author(s):  
Guanyuan M. Yu ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Silicon Oxide ◽  
Two Dimensional ◽  
Dopant Diffusion ◽  
Diffusion Study ◽  
Oxide Interface ◽  
Deconvolution Technique ◽  
Drain Region ◽  
And Diffusion ◽  
Preparation Techniques ◽  
Channel Region

ABSTRACTThe results of a two-dimensional dopant diffusion study using two new sample preparation techniques and a database-driven deconvolution technique are presented. These techniques are applied to real devices to justify complex implantation and diffusion models. It will be shown that the dose loss behavior is not uniform along the silicon/oxide interface from the source/drain region to the channel region. A new non-uniform dose loss model is proposed and used to explain the experimental results.

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer

2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Hydrogen Passivation ◽  
Oxide Interface ◽  
Silicon Silicon

TRIGGERING OF DETONATION PROCESSES IN PROPULSION CHAMBER

2021 ◽  
Vol 14 (2) ◽  
pp. 40-45
Author(s):  
D. V. VORONIN ◽  
Keyword(s):  
Thermal Conductivity ◽  
Numerical Modeling ◽  
Gas Flow ◽  
Stokes Equations ◽  
Navier Stokes ◽  
Two Dimensional ◽  
Navier Stokes Equations ◽  
Chemically Reacting ◽  
Plane Disk ◽  
And Diffusion

The Navier-Stokes equations have been used for numerical modeling of chemically reacting gas flow in the propulsion chamber. The chamber represents an axially symmetrical plane disk. Fuel and oxidant were fed into the chamber separately at some angle to the inflow surface and not parallel one to another to ensure better mixing of species. The model is based on conservation laws of mass, momentum, and energy for nonsteady two-dimensional compressible gas flow in the case of axial symmetry. The processes of viscosity, thermal conductivity, turbulence, and diffusion of species have been taken into account. The possibility of detonation mode of combustion of the mixture in the chamber was numerically demonstrated. The detonation triggering depends on the values of angles between fuel and oxidizer jets. This type of the propulsion chamber is effective because of the absence of stagnation zones and good mixing of species before burning.

Sedimentation and diffusion study of the macromolecules of graft copolymers in solution

1968 ◽  
Vol 10 (6) ◽  
pp. 1563-1573 ◽  
Author(s):  
A.N. Cherkasov ◽  
T.N. Osipova ◽  
S.I. Klenin
Keyword(s):  
Graft Copolymers ◽  
Diffusion Study ◽  
And Diffusion

A New Model Silicon/Silicon Oxide Interface Synthesized fromH10Si10O15andSi(100)-2×1

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely
Keyword(s):  
Silicon Oxide ◽  
Oxide Interface ◽  
New Model ◽  
Silicon Silicon
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