scholarly journals Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors

2019 ◽  
Vol 126 (17) ◽  
pp. 175703 ◽  
Author(s):  
Conrad Spindler ◽  
Thomas Galvani ◽  
Ludger Wirtz ◽  
Germain Rey ◽  
Susanne Siebentritt
Keyword(s):  
Deep Level ◽  
Excitation Intensity ◽  
Intensity Dependence

Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

2014 ◽  
Vol 115 (23) ◽  
pp. 233516 ◽  
Author(s):  
Dongchao Hou ◽  
Tobias Voss ◽  
Carsten Ronning ◽  
Andreas Menzel ◽  
Margit Zacharias
Keyword(s):  
Deep Level ◽  
Excitation Intensity ◽  
Zno Nanowires ◽  
Deep Level Emission ◽  
Crystalline Quality ◽  
Bulk Crystals ◽  
Intensity Dependence ◽  
Dependence Versus

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

2018 ◽  
Vol 122 (22) ◽  
pp. 12106-12113 ◽  
Author(s):  
Natalie A. Gibson ◽  
Brent A. Koscher ◽  
A. Paul Alivisatos ◽  
Stephen R. Leone
Keyword(s):  
Excitation Intensity ◽  
Intensity Dependence ◽  
Perovskite Nanocrystals

scholarly journals Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of band mixing

2016 ◽  
Vol 94 (8) ◽  
Author(s):  
Huynh Thanh Duc ◽  
Reinold Podzimski ◽  
Shekhar Priyadarshi ◽  
Mark Bieler ◽  
Torsten Meier
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Band Mixing

Excitation Intensity Dependence of Ga1-xAlxAs-GaAs-Superlattice Photoluminescence

1987 ◽  
Vol 35 (1) ◽  
pp. 76-78 ◽  
Author(s):  
H Weinert ◽  
F Henneberger ◽  
U Woggon ◽  
I N Uraltsev ◽  
H-G Brühl
Keyword(s):  
Excitation Intensity ◽  
Intensity Dependence

Time Dependence and Excitation-Intensity Dependence of Luminescence in CdTe

1984 ◽  
Vol 53 (11) ◽  
pp. 4064-4069 ◽  
Author(s):  
Tomoko Ohtsuki ◽  
Takashi Kushida ◽  
Shozo Hongo ◽  
Hiroshi Bō
Keyword(s):  
Time Dependence ◽  
Excitation Intensity ◽  
Intensity Dependence

Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1335-1339 ◽  
Author(s):  
J Motohisa ◽  
J.J Baumberg ◽  
A.P Heberle ◽  
J Allam
Keyword(s):  
Quantum Dots ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Self Assembled

The excitation intensity dependence of singlet fission dynamics of a rubrene microcrystal studied by femtosecond transient microspectroscopy

2016 ◽  
Vol 15 (10) ◽  
pp. 1304-1309 ◽  
Author(s):  
Y. Ishibashi ◽  
Y. Inoue ◽  
T. Asahi
Keyword(s):  
Local Heating ◽  
Excitation Intensity ◽  
Singlet Fission ◽  
Nonradiative Relaxation ◽  
Intensity Dependence

When a rubrene crystal was excited with an intense fs pulse (397 nm), transient local heating (∼ps) of the crystal through nonradiative relaxation from SN to S1 accelerates singlet fission of the S1.

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