Deep-level emission in ZnO nanowires and bulk crystals: Excitation-intensity dependence versus crystalline quality

2014 ◽  
Vol 115 (23) ◽  
pp. 233516 ◽  
Author(s):  
Dongchao Hou ◽  
Tobias Voss ◽  
Carsten Ronning ◽  
Andreas Menzel ◽  
Margit Zacharias
Keyword(s):  
Deep Level ◽  
Excitation Intensity ◽  
Zno Nanowires ◽  
Deep Level Emission ◽  
Crystalline Quality ◽  
Bulk Crystals ◽  
Intensity Dependence ◽  
Dependence Versus

Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films

2005 ◽  
Vol 282 (3-4) ◽  
pp. 359-364 ◽  
Author(s):  
R.P. Wang ◽  
H. Muto ◽  
X. Gang ◽  
P. Jin ◽  
M. Tazawa
Keyword(s):  
Deep Level ◽  
Excitation Intensity ◽  
Deep Level Emission ◽  
Zno Films

scholarly journals Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors

2019 ◽  
Vol 126 (17) ◽  
pp. 175703 ◽  
Author(s):  
Conrad Spindler ◽  
Thomas Galvani ◽  
Ludger Wirtz ◽  
Germain Rey ◽  
Susanne Siebentritt
Keyword(s):  
Deep Level ◽  
Excitation Intensity ◽  
Intensity Dependence

scholarly journals Photoluminescence of ZnO Nanowires: A Review

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 857 ◽  
Author(s):  
Andres Galdámez-Martinez ◽  
Guillermo Santana ◽  
Frank Güell ◽  
Paulina R. Martínez-Alanis ◽  
Ateet Dutt
Keyword(s):  
Carrier Transport ◽  
Spatial Information ◽  
Deep Level ◽  
Ultra Violet ◽  
Zno Nanowires ◽  
Deep Level Emission ◽  
Near Band Edge ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Different Origins

One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

2018 ◽  
Vol 122 (22) ◽  
pp. 12106-12113 ◽  
Author(s):  
Natalie A. Gibson ◽  
Brent A. Koscher ◽  
A. Paul Alivisatos ◽  
Stephen R. Leone
Keyword(s):  
Excitation Intensity ◽  
Intensity Dependence ◽  
Perovskite Nanocrystals

Synthesis of ZnO Nanowires by Pulsed Laser Deposition in Furnace

2005 ◽  
Vol 900 ◽  
Author(s):  
Kyung Ah Jeon ◽  
Hyo Jeong Son ◽  
Jong Hoon Kim ◽  
K. H. Yoo ◽  
Sang Yeol Lee
Keyword(s):  
Pulsed Laser Deposition ◽  
Deep Level ◽  
Average Length ◽  
Green Light ◽  
Pulsed Laser ◽  
Zno Nanowires ◽  
Laser Deposition ◽  
Near Band Edge ◽  
Vacuum Furnace ◽  
Sem Images

ABSTRACTZnO nanowires (NWs) were fabricated on Au coated sapphire (0001) substrates by using a pulsed laser deposition (PLD) system in vacuum furnace with a Q-switched Nd:YAG laser. ZnO NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. Scanning electron microscopy (SEM) images indicate that the diameters of ZnO NWs ranged from 100 to 150 nm and the average length was greater than 3 μm. Room-temperature photoluminescence spectra of the NWs show the near band-edge emissions and the deep-level green light emissions. The formation mechanism of the NWs is discussed.

Electrical and Optical Characterisation of Homojjunction Gallium Nitride Light Emitting Diodes

1997 ◽  
Vol 482 ◽  
Author(s):  
G M Laws ◽  
J Morgan ◽  
G B Ren ◽  
I Harrison ◽  
E C Larkins ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Full Width Half Maximum ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Deep Level Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractWe report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphire show turn on voltages of between 4 and 5V with large on-series resistance of 600Ω; for corresponding devices grown on GaAs these parameters are between 6 and 7V and 150 Ω, respectively.Room temperature electroluminescence (EL) spectra from the GaN LEDs ,grown on sapphire substrates, show a dominant emission at 3.2 eV (397nm) with a full width half maximum (FWHM) of 335 meV which is attributed to free electron to acceptor transitions (e, A−Mg). A broad low intensity deep level emission is also observed centred at 2.4 eV (506nm). The peak of the EL from the devices grown on GaAs is at 3.1eV rather than 3.2eV. The differences between the two sets of devices are probably caused by the different device geometry.Preliminary results show that an “annealing” effect caused by electrical stressing resulted in an improvement of the EL spectra. The stressed samples show an increase in the near band edge emission intensity, a 20meV reduction in the FWHM and a significant reduction in the intensity of the deep level emission. The devices have a large 1/f noise contribution which does not appear to change after electrical stressing.

scholarly journals Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of band mixing

2016 ◽  
Vol 94 (8) ◽  
Author(s):  
Huynh Thanh Duc ◽  
Reinold Podzimski ◽  
Shekhar Priyadarshi ◽  
Mark Bieler ◽  
Torsten Meier
Keyword(s):  
Quantum Wells ◽  
Excitation Intensity ◽  
Intensity Dependence ◽  
Band Mixing
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