scholarly journals Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

2019 ◽  
Vol 114 (11) ◽  
pp. 112106 ◽  
Author(s):  
Marie-Amandine Pinault-Thaury ◽  
Solange Temgoua ◽  
Rémi Gillet ◽  
Hakima Bensalah ◽  
Ingrid Stenger ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Phosphorus Doped

Electron spin resonance characterization of phosphorus-doped CVD diamond films

2004 ◽  
Vol 201 (11) ◽  
pp. 2451-2456 ◽  
Author(s):  
M. Katagiri ◽  
J. Isoya ◽  
S. Koizumi ◽  
H. Kanda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance ◽  
Phosphorus Doped

Radiative recombination in phosphorus-doped CVD diamond

2004 ◽  
Vol 201 (11) ◽  
pp. 2405-2413 ◽  
Author(s):  
R. Sauer ◽  
N. Teofilov ◽  
K. Thonke ◽  
S. Koizumi
Keyword(s):  
Radiative Recombination ◽  
Cvd Diamond ◽  
Phosphorus Doped

Photocurrent and optical absorption spectroscopic study of n-type phosphorus-doped CVD diamond

1999 ◽  
Vol 8 (2-5) ◽  
pp. 882-885 ◽  
Author(s):  
M Nesládek ◽  
K Meykens ◽  
K Haenen ◽  
L.M Stals ◽  
T Teraji ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Spectroscopic Study ◽  
Cvd Diamond ◽  
Phosphorus Doped

Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

2003 ◽  
Vol 199 (1) ◽  
pp. 82-86 ◽  
Author(s):  
Z. Remes ◽  
R. Kalish ◽  
C. Uzan-Saguy ◽  
E. Baskin ◽  
M. Nesládek ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Cvd Diamond ◽  
Hall Measurements ◽  
Phosphorus Doped

Cathodoluminescence Studies of Bound Excitons and Near Band Gap Emission Lines in Boron- and Phosphorus-Doped CVD-Diamonds

1996 ◽  
Vol 423 ◽  
Author(s):  
H. Sternschulte ◽  
T. Albrecht ◽  
K. Thonke ◽  
R. Sauer ◽  
M. Grieβer ◽  
...  
Keyword(s):  
Free Exciton ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Emission Lines ◽  
Silicon Substrates ◽  
Cryogenic Temperatures ◽  
Shallow Impurity ◽  
Background Doping ◽  
And Shifts ◽  
Phosphorus Doped

AbstractCathodoluminescence measurements at cryogenic temperatures are reported on boron- and phosphorus-doped CVD-diamond films grown on silicon substrates. Boron and phosphorus concentrations were determined by SIMS measurements; for boron, they reached from unintentional background doping levels up to 3500 ppm. At increasing boron concentrations, the radiative recombination of boron bound excitons (BEto) at 5.22 eV photon energy systematically broadens and shifts down to 4.99 eV whereas the free exciton emission (FEto) disappears for 40 ppm and higher. In the phosphorus-doped films we observe new lines at 5.16 eV and 4.99 eV which we ascribe to TO- and (TO+Or)-phonon assisted transitions of an exciton bound to a shallow impurity other than boron, possibly phosphorus or a phosphorus-related shallow complex.

Donor-related cathodoluminescence in phosphorus-doped CVD diamond

2004 ◽  
Vol 13 (4-8) ◽  
pp. 727-731 ◽  
Author(s):  
R. Sauer ◽  
N. Teofilov ◽  
K. Thonke ◽  
S. Koizumi
Keyword(s):  
Cvd Diamond ◽  
Phosphorus Doped

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

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