Transmission Electron Microscopy of the CVD Diamond Film/Substrate Interface.

1991 ◽  
Author(s):  
Dan Shechtman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Diamond Film ◽  
Cvd Diamond ◽  
Substrate Interface ◽  
Transmission Electron ◽  
Cvd Diamond Film ◽  
Film Substrate

High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi2Sr2Can−1CunO4+2n + δ films on SrTiO3 and LaAlO3

1996 ◽  
Vol 11 (10) ◽  
pp. 2416-2428 ◽  
Author(s):  
N. D. Zakharov ◽  
D. Hesse ◽  
J. Auge ◽  
H. G. Roskos ◽  
H. Kurz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Layer By Layer ◽  
Composite Target ◽  
Substrate Interface ◽  
Dc Sputtering ◽  
Transmission Electron ◽  
Interfacial Dislocations ◽  
Film Substrate

The defect structure of epitaxial, c-oriented Bi2Sr2Can−1CunO4+2n+δ (BSCCO) thin films grown by dc-sputtering and layer-by-layer MBE on SrTiO3 and LaAlO3 single crystal substrates was investigated by high-resolution transmission electron microscopy (HRTEM). Particular emphasis was put on the structure of the film/substrate interface. The films grown by dc-sputtering show a rather perfect structure involving a regular stacking of the unit cells. In spite of this regularity, there are many defects, such as twins, chemical stacking faults, and precipitates, as well as interfacial dislocations accommodating the film/substrate lattice misfit. The MBE-grown films contain twins and interfacial dislocations, but most prominent are precipitates of various size and rather high number density. Composition and structure of the precipitates were analyzed. Interfacial dislocations were found to be located in the films at a distance of up to 3 nm from the film/substrate interface. The experiments showed that the quality of the film/substrate interface in MBE-grown films is considerably higher with respect to smoothness, sharpness, and regularity, if the layer-by-layer MBE process starts with a Sr–O layer instead of a Bi–O layer. This observation is in correspondence to the observed interface structure of the dc-sputtered films, where the first film layer was a Sr–O layer, not a Bi–O layer, in spite of the films being sputtered from a composite target. A structure model of the Bi2Sr2Can−1CunO4+2n+δ/(100)SrTiO3 interface is proposed. The prolonged MBE process was shown to imply a chemical interaction between the SrTiO3 substrate and the growing film, resulting in the formation of Sr-rich phases in the near-interface substrate regions.

Influence of Film/Substrate Interface Structure on Plasticity in Metal Thin Films

2001 ◽  
Vol 673 ◽  
Author(s):  
G. Dehm ◽  
B.J. Inkson ◽  
T.J. Balk ◽  
T. Wagner ◽  
E. Arzt
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Dislocation Motion ◽  
Metal Thin Films ◽  
Cu Films ◽  
Substrate Interface ◽  
Transmission Electron ◽  
Curvature Measurements ◽  
Film Substrate

ABSTRACTIn-situ transmission electron microscopy studies of metal thin films on substrates indicate that dislocation motion is influenced by the structure of the film/substrate interface. For Cu films grown on silicon substrates coated with an amorphous SiNx diffusion barrier, the transmission electron microscopy studies reveal that dislocations are pulled towards the interface, where their contrast finally disappears. However, in epitaxial Al films deposited on single-crystalline α- Al2O3 substrates, threading dislocations advance through the layer and deposit dislocation segments adjacent to the interface. In this latter case, the interface is between two crystalline lattices. Stresses in epitaxial Al films and polycrystalline Cu films were determined by substrate- curvature measurements. It was found that, unlike the polycrystalline Cu films, the flow stresses in the epitaxial Al films are in agreement with a dislocation-based model.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Interfacial Structure of BaRuO3 Thin Films Grown On (111) SrTiO3

2000 ◽  
Vol 654 ◽  
Author(s):  
W. Tian ◽  
M. K. Lee ◽  
C. B. Eom ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Intermediate Layer ◽  
Interfacial Structure ◽  
Initial Growth ◽  
Growth Modes ◽  
Transmission Electron ◽  
Quantitative Image ◽  
Film Substrate

AbstractBaRuO3 thin films were grown on (111) SrTiO3substrate by 90° off-axis rf-sputtering. Transmission electron microscopy studies revealed that the films consist of the metastable 4H hexagonal polymorph of BaRuO3 along with few defects. The films are c-axis oriented, single crystalline with the in-plane orientation relationship with respect to the SrTiO3substrate of [112 0] BaRuO3 // [110] SrTiO3. High-resolution transmission electron microscopy (HRTEM) studies of the film-substrate interface revealed the existence of a thin intermediate layer of the 9R hexagonal polymorph of BaRuO3 between the (111) SrTiO3 substrate and the 4H film. The formation mechanism for the intermediate layer is not fully understood though. Through the combination of HRTEM and quantitative image simulations, the atomic structure of the interface between the 9R intermediate layer and the underneath (111) SrTiO3 was constructed. Three initial growth modes were observed, each of them adopting the local continuity of the oxygen octahedral sublattice across the interface.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Transmission Electron Microscopy and X-Ray Diffraction Studies of a,b-Axis Oriented YBa2Cu3O7-δ Films

1992 ◽  
Vol 275 ◽  
Author(s):  
S. K. Streiffer ◽  
B. M. Lairson ◽  
E. M. Zielinski ◽  
J. C. Bravman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Microscopy Data ◽  
Film Substrate ◽  
Substrate Temperatures ◽  
High Resolution Microscopy

ABSTRACTQuantitative high resolution transmission electron microscopy and x-ray diffraction have been used to study films of YBa2Cu3O7-δ grown on LaAlO3 substrates at low substrate temperatures. Based on analysis of high-resolution micrographs, it is asserted that the films are b-axis oriented near the film-substrate interface, and switch to a-axis oriented at some distance away from the interface, in a manner which varies from sample to sample. Thus, the films undergo a change in orientation as a function of distance from the substrate. X-ray diffraction confirms that these films contain both a-axis oriented and b-axis oriented components normal to the plane of the substrate, consistent with the high-resolution microscopy data.

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