Radiative recombination in phosphorus-doped CVD diamond

2004 ◽  
Vol 201 (11) ◽  
pp. 2405-2413 ◽  
Author(s):  
R. Sauer ◽  
N. Teofilov ◽  
K. Thonke ◽  
S. Koizumi
Keyword(s):  
Radiative Recombination ◽  
Cvd Diamond ◽  
Phosphorus Doped

scholarly journals Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

2019 ◽  
Vol 114 (11) ◽  
pp. 112106 ◽  
Author(s):  
Marie-Amandine Pinault-Thaury ◽  
Solange Temgoua ◽  
Rémi Gillet ◽  
Hakima Bensalah ◽  
Ingrid Stenger ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Phosphorus Doped

Electron spin resonance characterization of phosphorus-doped CVD diamond films

2004 ◽  
Vol 201 (11) ◽  
pp. 2451-2456 ◽  
Author(s):  
M. Katagiri ◽  
J. Isoya ◽  
S. Koizumi ◽  
H. Kanda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance ◽  
Phosphorus Doped

Photocurrent and optical absorption spectroscopic study of n-type phosphorus-doped CVD diamond

1999 ◽  
Vol 8 (2-5) ◽  
pp. 882-885 ◽  
Author(s):  
M Nesládek ◽  
K Meykens ◽  
K Haenen ◽  
L.M Stals ◽  
T Teraji ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Spectroscopic Study ◽  
Cvd Diamond ◽  
Phosphorus Doped

Characterization of a Thick Homoepitaxial CVD Diamond Film

1994 ◽  
Vol 339 ◽  
Author(s):  
M. A. Plano ◽  
M. D. Moyer ◽  
M. M. Moreno ◽  
D. Black ◽  
H. Burdette ◽  
...  
Keyword(s):  
Diamond Film ◽  
Surface Relief ◽  
Radiative Recombination ◽  
Microwave Plasma ◽  
Cvd Diamond ◽  
Defect Complexes ◽  
Microwave Plasma Cvd ◽  
Before And After ◽  
Recombination Centers ◽  
Cvd Diamond Film

ABSTRACTA thick homoepitaxial CVD diamond film was grown on a large high temperature, high pressure (HTHP) Ha diamond to study the defects present in the CVD film. The HTHP diamond had dimensions of 6 mm x 6 mm x 0.44 mm. The thickness of the diamond was increased to 0.84 mm by microwave plasma CVD. X-ray topographs were taken before and after growth to compare the defects in CVD diamond to those in the HTHP diamond. Prior to growth the substrate was unstrained and the characteristic microstructure of stacking faults and dislocations was observed. There was also a surface relief, visible optically, on the substrate of lines along the [100] which are probably due to polishing. After deposition of the CVD film, the crystal was strained with the film in tension. The defect structure observed throughout the CVD film followed the surface relief of the substrate. Cathodoluminescence spectra indicate that the film contains nitrogen defect complexes which are not present in the substrate. Cathodoluminescence also indicates that there are more non-radiative recombination centers in the film than in the substrate. Electrical results from transient photoconductivity measurements indicate that while the mobilities of the film and the substrate are comparable, the lifetime is much shorter in the film, possibly reflecting the higher concentration of non-radiative recombination centers.

Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

2003 ◽  
Vol 199 (1) ◽  
pp. 82-86 ◽  
Author(s):  
Z. Remes ◽  
R. Kalish ◽  
C. Uzan-Saguy ◽  
E. Baskin ◽  
M. Nesládek ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Cvd Diamond ◽  
Hall Measurements ◽  
Phosphorus Doped

Cathodoluminescence Studies of Bound Excitons and Near Band Gap Emission Lines in Boron- and Phosphorus-Doped CVD-Diamonds

1996 ◽  
Vol 423 ◽  
Author(s):  
H. Sternschulte ◽  
T. Albrecht ◽  
K. Thonke ◽  
R. Sauer ◽  
M. Grieβer ◽  
...  
Keyword(s):  
Free Exciton ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Emission Lines ◽  
Silicon Substrates ◽  
Cryogenic Temperatures ◽  
Shallow Impurity ◽  
Background Doping ◽  
And Shifts ◽  
Phosphorus Doped

AbstractCathodoluminescence measurements at cryogenic temperatures are reported on boron- and phosphorus-doped CVD-diamond films grown on silicon substrates. Boron and phosphorus concentrations were determined by SIMS measurements; for boron, they reached from unintentional background doping levels up to 3500 ppm. At increasing boron concentrations, the radiative recombination of boron bound excitons (BEto) at 5.22 eV photon energy systematically broadens and shifts down to 4.99 eV whereas the free exciton emission (FEto) disappears for 40 ppm and higher. In the phosphorus-doped films we observe new lines at 5.16 eV and 4.99 eV which we ascribe to TO- and (TO+Or)-phonon assisted transitions of an exciton bound to a shallow impurity other than boron, possibly phosphorus or a phosphorus-related shallow complex.

Donor-related cathodoluminescence in phosphorus-doped CVD diamond

2004 ◽  
Vol 13 (4-8) ◽  
pp. 727-731 ◽  
Author(s):  
R. Sauer ◽  
N. Teofilov ◽  
K. Thonke ◽  
S. Koizumi
Keyword(s):  
Cvd Diamond ◽  
Phosphorus Doped

Iron K-Line Emission from X-Ray Binaries

1988 ◽  
Vol 102 ◽  
pp. 47-50
Author(s):  
K. Masai ◽  
S. Hayakawa ◽  
F. Nagase
Keyword(s):  
Accretion Disk ◽  
Radiative Recombination ◽  
Characteristic Temperature ◽  
Line Emission ◽  
Ionization Front ◽  
Continuum Radiation ◽  
X Ray ◽  
Low Mass ◽  
X Ray Binaries

AbstractEmission mechanisms of the iron Kα-lines in X-ray binaries are discussed in relation with the characteristic temperature Txof continuum radiation thereof. The 6.7 keV line is ascribed to radiative recombination followed by cascades in a corona of ∼ 100 eV formed above the accretion disk. This mechanism is attained for Tx≲ 10 keV as observed for low mass X-ray binaries. The 6.4 keV line observed for binary X-ray pulsars with Tx> 10 keV is likely due to fluorescence outside the He II ionization front.

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

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