Cathodoluminescence Studies of Bound Excitons and Near Band Gap Emission Lines in Boron- and Phosphorus-Doped CVD-Diamonds

1996 ◽  
Vol 423 ◽  
Author(s):  
H. Sternschulte ◽  
T. Albrecht ◽  
K. Thonke ◽  
R. Sauer ◽  
M. Grieβer ◽  
...  
Keyword(s):  
Free Exciton ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Emission Lines ◽  
Silicon Substrates ◽  
Cryogenic Temperatures ◽  
Shallow Impurity ◽  
Background Doping ◽  
And Shifts ◽  
Phosphorus Doped

AbstractCathodoluminescence measurements at cryogenic temperatures are reported on boron- and phosphorus-doped CVD-diamond films grown on silicon substrates. Boron and phosphorus concentrations were determined by SIMS measurements; for boron, they reached from unintentional background doping levels up to 3500 ppm. At increasing boron concentrations, the radiative recombination of boron bound excitons (BEto) at 5.22 eV photon energy systematically broadens and shifts down to 4.99 eV whereas the free exciton emission (FEto) disappears for 40 ppm and higher. In the phosphorus-doped films we observe new lines at 5.16 eV and 4.99 eV which we ascribe to TO- and (TO+Or)-phonon assisted transitions of an exciton bound to a shallow impurity other than boron, possibly phosphorus or a phosphorus-related shallow complex.

Electron spin resonance characterization of phosphorus-doped CVD diamond films

2004 ◽  
Vol 201 (11) ◽  
pp. 2451-2456 ◽  
Author(s):  
M. Katagiri ◽  
J. Isoya ◽  
S. Koizumi ◽  
H. Kanda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance ◽  
Phosphorus Doped

Rectification and internal photoemission in metal/CVD diamond and metal/CVD diamond/silicon structures

1990 ◽  
Vol 5 (11) ◽  
pp. 2497-2501 ◽  
Author(s):  
S. A. Grot ◽  
S. Lee ◽  
G.Sh. Gildenblat ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Schottky Diodes ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Silicon Substrates ◽  
Metal Contacts ◽  
Free Standing ◽  
Internal Photoemission ◽  
Silicon Structures

Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Schottky diodes and the diamond film. Internal photoemission measurements yielded a barrier height of 1.15 eV. A comparison of experimental data for metal contacts to free-standing diamond films and those on silicon substrates indicates that both rectification and internal photoemission originate at the metal/diamond interface.

scholarly journals Chemically vapor deposited diamond films as dosimetric material for potential clinical applications

2018 ◽  
Vol 35 (4) ◽  
pp. 702-706
Author(s):  
Renata Kabacińska ◽  
Janusz Winiecki ◽  
Krzysztof Przegiętka ◽  
Mirosław Szybowicz ◽  
Kazimierz Fabisiak ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Clinical Applications ◽  
Sample Thickness ◽  
Escape Time ◽  
Silicon Substrates ◽  
Thermally Stimulated Luminescence ◽  
Donor Acceptor ◽  
Chemically Vapor Deposited

Abstract Thermally stimulated luminescence (TL), cathodoluminescence (CL) and Raman spectroscopy of CVD diamond films grown on silicon substrates have been studied in order to obtain information on defects created during the growth, which induce the levels within the gap. TL between 300 K and 700 K, and CL from 200 nm to 1200 nm have been teasured. The glow curves show a peak located around 610 K with different intensities, depending on the sample thickness, associated with a trap of energy, equal to 0.83 eV and with attempt-to-escape-time of the order of 108 s-1. Broad CL bands observed at 428±1 nm (2.90 ±0.01 eV) and 500±1 nm (2.47±0.004 eV) are attributed to closely spaced and widely separated donor-acceptor (D-A) pairs, respectively. The TL and CL results were correlated with diamond quality estimated from Raman spectroscopy measurements.

Thin Nano- and Microcrystalline CVD Diamond Films for Micro-channel Cooling: Thermal and Elastic Properties

2011 ◽  
Vol 1282 ◽  
Author(s):  
Robbe Salenbien ◽  
Jan Sermeus ◽  
Paulius Pobedinskas ◽  
Christ Glorieux ◽  
Ken Haenen
Keyword(s):  
Vapor Deposition ◽  
Acoustic Waves ◽  
Metal Layer ◽  
Surface Acoustic Waves ◽  
Diamond Films ◽  
Diffraction Method ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Optical Scattering ◽  
Silicon Substrates

ABSTRACTThin nano- to microcrystalline diamond (N/MCD) films were deposited on silicon substrates using plasma enhanced microwave chemical vapor deposition. Selected layers were covered with a thin metal layer of Cr to enhance their optical absorption characteristics for photothermal and photoacoustic experiments. A heterodyne diffraction method was used to investigate the thermoelastic signatures of the N/MCD layers. While the dispersion of surface acoustic waves turned out to be difficult to determine due to high optical scattering from the diamond crystallites, it was found that a diamond film of ~ 2 μm thick is enhancing the thermal diffusion along the surface.

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