Electron spin resonance characterization of phosphorus-doped CVD diamond films

2004 ◽  
Vol 201 (11) ◽  
pp. 2451-2456 ◽  
Author(s):  
M. Katagiri ◽  
J. Isoya ◽  
S. Koizumi ◽  
H. Kanda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance ◽  
Phosphorus Doped

Characterization of defects in monocrystalline CVD diamond films by electron spin resonance

2003 ◽  
Vol 12 (3-7) ◽  
pp. 511-515 ◽  
Author(s):  
K. Iakoubovskii ◽  
A. Stesmans ◽  
K. Suzuki ◽  
J. Kuwabara ◽  
A. Sawabe
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance

Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance

1995 ◽  
Vol 78 (12) ◽  
pp. 7059-7062 ◽  
Author(s):  
P. Gonon ◽  
E. Gheeraert ◽  
A. Deneuville ◽  
F. Fontaine ◽  
L. Abello ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Spin Resonance

Correlation Between Defects and Electrical Conduction in Surface Conductive Layer of CVD-diamond Films

1996 ◽  
Vol 442 ◽  
Author(s):  
Y. Show ◽  
F. Matsuoka ◽  
S. Ri ◽  
Y. Akiba ◽  
T. Kurosu ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Carbon Atom ◽  
Electron Spin ◽  
Electrical Conduction ◽  
Nearest Neighbor ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Conductive Layer ◽  
Dangling Bond ◽  
Spin Resonance

Correlation between defects and electrical conduction in surface conductive layers of CVD diamond films has been studied using electron spin resonance ( ESR ) and two points probe technique methods. The ESR analysis revealed the presence of Pac-center with spin density of 1020 spins/cm3. The Pac-center is composed from two ESR signals: ESR signal from carbon dangling bond with carbon atom neighbors and ESR signal from carbon dangling bond associated with nearest neighbor hole ( hole associated Pac-center ). The hole associated Pac-center is an electrically active defect.

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

scholarly journals Characterization of manganese in coal by electron spin resonance.

1985 ◽  
Vol 34 (5) ◽  
pp. 243-247 ◽  
Author(s):  
Junichi SHIDA ◽  
Mamoru ITOH ◽  
Tateaki OGATA ◽  
Hitoshi KAMADA
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance
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