Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Chao Wang; Stephen Y. Chou

doi:10.1116/1.3237138

Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea?

ECS Meeting Abstracts ◽

10.1149/ma2010-02/30/1892 ◽

2010 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Design and Modeling of Line-Tunneling Field-Effect Transistors Using Low-Bandgap Semiconductors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2316217 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1907-1913 ◽

Cited By ~ 14

Author(s):

Chun-Hsing Shih ◽

Nguyen Dang Chien

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Bandgap ◽

Tunneling Field Effect Transistors ◽

Bandgap Semiconductors

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Tunneling Field Effect Transistors for Enhancing Energy Efficiency and Hardware Security of IoT Platforms: Challenges and Opportunities

2018 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas.2018.8350939 ◽

2018 ◽

Cited By ~ 4

Author(s):

Japa Aditya ◽

T. Nagateja ◽

Santosh Kumar Vishvakarma ◽

Palagani Yellappa ◽

Jun Rim Choi ◽

...

Keyword(s):

Energy Efficiency ◽

Field Effect ◽

Field Effect Transistors ◽

Hardware Security ◽

Tunneling Field Effect Transistors ◽

Challenges And Opportunities ◽

Iot Platforms ◽

Security Of Iot

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Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Cited By ~ 10

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19401 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4310-4314

Author(s):

Juhee Jeon ◽

Young-Soo Park ◽

Sola Woo ◽

Doohyeok Lim ◽

Jaemin Son ◽

...

Keyword(s):

Design Optimization ◽

Mole Fraction ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Barrier ◽

Current Ratio ◽

Threshold Voltages ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

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Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms

VLSI and Post-CMOS Electronics. Volume 1: Design, modelling and simulation ◽

10.1049/pbcs073f_ch11 ◽

2019 ◽

pp. 263-285

Keyword(s):

Power Management ◽

Energy Efficient ◽

Field Effect ◽

Field Effect Transistors ◽

Edge Computing ◽

Digital Rf ◽

Tunneling Field Effect Transistors ◽

Computing Platforms

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Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.06fe09 ◽

2012 ◽

Vol 51 ◽

pp. 06FE09 ◽

Cited By ~ 10

Author(s):

Sang Wan Kim ◽

Woo Young Choi ◽

Min-Chul Sun ◽

Hyun Woo Kim ◽

Byung-Gook Park

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Design Guideline ◽

Tunneling Field Effect Transistors

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