Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

2010 ◽  
Vol 108 (10) ◽  
pp. 104503 ◽  
Author(s):  
M. Abul Khayer ◽  
Roger K. Lake
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Gan Nanowire ◽  
And Performance

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4310-4314
Author(s):  
Juhee Jeon ◽  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Jaemin Son ◽  
...  
Keyword(s):  
Design Optimization ◽  
Mole Fraction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Barrier ◽  
Current Ratio ◽  
Threshold Voltages ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Comparative Performance Analysis of Multi Gate Tunnel Field Effect Transistors

2016 ◽  
Vol 41 ◽  
pp. 1-8 ◽  
Author(s):  
T.S. Arun Samuel ◽  
M. Karthigai Pandian
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Analytical Models ◽  
Comparative Performance ◽  
Novel Device ◽  
Device Structures ◽  
And Performance ◽  
Dual Material

In this paper, analytical modelling and performance analysis of novel device structures such as single gate SOI Tunnel Field Effect transistor (SG SOI TFET), Dual-Material Gate TFET (DMG TFET) and Dual Material Double Gate TFET (DMDG TFET) are proposed. The performance of the three devices is studied and compared in terms of surface potential, electric field and drain current. The DMDG TFET shows better performance in suppressing leakage current and enhancing ION current than the SG SOI TFET and DMG TFET. The analytical models of the devices are found to be in good agreement with the results obtained using two-dimensional TCAD device simulator.

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