Optical detection of misfit dislocation‐induced deep levels at InGaAs/GaAs heterojunctions

A. Raisanen; L. J. Brillson; R. S. Goldman; K. L. Kavanagh; H. H. Wieder

doi:10.1063/1.111201

Optical detection of misfit dislocation‐induced deep levels at InGaAs/GaAs heterojunctions

Applied Physics Letters ◽

10.1063/1.111201 ◽

1994 ◽

Vol 64 (26) ◽

pp. 3572-3574 ◽

Cited By ~ 11

Author(s):

A. Raisanen ◽

L. J. Brillson ◽

R. S. Goldman ◽

K. L. Kavanagh ◽

H. H. Wieder

Keyword(s):

Misfit Dislocation ◽

Optical Detection ◽

Deep Levels

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Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers

Journal of Applied Physics ◽

10.1063/1.5011297 ◽

2018 ◽

Vol 123 (16) ◽

pp. 161588 ◽

Cited By ~ 3

Author(s):

M. M. Sobolev ◽

F. Yu. Soldatenkov ◽

I. L. Shul'pina

Keyword(s):

Relaxation Time ◽

Misfit Dislocation ◽

Deep Levels ◽

Nonequilibrium Carriers

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Misfit Dislocations in the Ilmenite (FeTiO3)-Hematite (Fe2O3) System

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600000921 ◽

1980 ◽

Vol 38 ◽

pp. 212-213 ◽

Cited By ~ 1

Author(s):

K.P.D. Lagerlöf ◽

A.H. Heuer ◽

T.E. Mitchell

Keyword(s):

Misfit Dislocation ◽

Lattice Parameters ◽

Dislocation Network ◽

Misfit Dislocations ◽

Space Group ◽

Two Phases ◽

Hematite Fe2o3

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

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The lowest triplet state of luminescent scheelites: a study of the MoO2-4 ion by electron paramagnetic resonance with optical detection

Molecular Physics ◽

10.1080/00268979609482456 ◽

1996 ◽

Vol 88 (3) ◽

pp. 803-820 ◽

Cited By ~ 1

Author(s):

J. VAN TOL ◽

J.H. VAN DER WAALS

Keyword(s):

Electron Paramagnetic Resonance ◽

Triplet State ◽

Optical Detection ◽

Paramagnetic Resonance ◽

Electron Paramagnetic

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OPTICAL DETECTION OF 1D FERROMAGNETISM IN CsNiF3

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19888664 ◽

1988 ◽

Vol 49 (C8) ◽

pp. C8-1447-C8-1448

Author(s):

T. Tsuboi ◽

R. Laiho

Keyword(s):

Optical Detection

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OPTICAL DETECTION AND QUANTIFICATION OF RADIOCARBON DIOXIDE (14CO2) AT AND BELOW AMBIENT LEVELS

Proceedings of the 72nd International Symposium on Molecular Spectroscopy ◽

10.15278/isms.2017.mk08 ◽

2017 ◽

Author(s):

David Long ◽

Joseph Hodges ◽

Qingnan Liu ◽

Adam Fleisher

Keyword(s):

Optical Detection ◽

Ambient Levels ◽

Detection And Quantification

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EXPERIMENTAL VERIFICATION OF DLTS MODELS

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210b72ba9.48046910 ◽

2019 ◽

Author(s):

Nataliya Mitina ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Data Processing ◽

Experimental Verification ◽

Deep Level ◽

Deep Levels ◽

Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210156607.46541827 ◽

2019 ◽

Author(s):

Aleksey Bogachev ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Energy Dependence ◽

Deep Level ◽

Deep Levels ◽

Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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