scholarly journals Modeling of Photoconductivity of Porous Silicon

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
L. S. Monastyrskii ◽  
B. S. Sokolovskii ◽  
M. R. Pavlyk ◽  
P. P. Parandii
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Relaxation Time ◽  
Porous Silicon ◽  
Time Evolution ◽  
Average Distance ◽  
Macroporous Silicon ◽  
The Finite Element Method ◽  
Nonequilibrium Carriers ◽  
Element Method

The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers. By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed.

Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20868-20875 ◽  
Author(s):  
Junxiong Guo ◽  
Yu Liu ◽  
Yuan Lin ◽  
Yu Tian ◽  
Jinxing Zhang ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Interfacial Effect ◽  
Infrared Photodetector ◽  
The Finite Element Method ◽  
Ferroelectric Domains ◽  
Element Method

We propose a graphene plasmonic infrared photodetector tuned by ferroelectric domains and investigate the interfacial effect using the finite element method.

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