Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

Hyundoek Yang; Yunik Son; Sungkwon Baek; Hyunsang Hwang; Hajin Lim; Hyung-Seok Jung

doi:10.1063/1.1871362

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1871362 ◽

2005 ◽

Vol 86 (9) ◽

pp. 092107 ◽

Cited By ~ 32

Author(s):

Hyundoek Yang ◽

Yunik Son ◽

Sungkwon Baek ◽

Hyunsang Hwang ◽

Hajin Lim ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations

10.7567/ssdm.2016.ps-6-05 ◽

2016 ◽

Author(s):

B.Y. Chen ◽

C.L. Chu ◽

J.L. Chen ◽

G.L. Luo ◽

T.T. Li ◽

...

Keyword(s):

Metal Oxide ◽

Numerical Simulations ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gates ◽

High K

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Work function tuning of plasma-enhanced atomic layer deposited WCxNyelectrodes for metal/oxide/semiconductor devices

Applied Physics Letters ◽

10.1063/1.4913715 ◽

2015 ◽

Vol 106 (8) ◽

pp. 082107 ◽

Cited By ~ 9

Author(s):

Oren Zonensain ◽

Sivan Fadida ◽

Ilanit Fisher ◽

Juwen Gao ◽

Kaushik Chattopadhyay ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Work Function Tuning

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Si metal-oxide-semiconductor devices with high κ HfO[sub 2] fabricated using a novel MBE template approach followed by atomic layer deposition

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2912087 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1178 ◽

Cited By ~ 3

Author(s):

C. H. Pan ◽

J. Kwo ◽

K. Y. Lee ◽

W. C. Lee ◽

L. K. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2009.03.190 ◽

2009 ◽

Vol 517 (18) ◽

pp. 5543-5547 ◽

Cited By ~ 8

Author(s):

Ole Bethge ◽

Stephan Abermann ◽

Christoph Henkel ◽

Emmerich Bertagnolli

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

High K ◽

High K Dielectric

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Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2345 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2345-2348 ◽

Cited By ~ 5

Author(s):

Kaori Tai ◽

Shinpei Yamaguchi ◽

Kazuki Tanaka ◽

Tomoyuki Hirano ◽

Itaru Oshiyama ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Threshold Voltage ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Modulation Technique ◽

Layer Deposition

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Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

Journal of Applied Physics ◽

10.1063/1.3553872 ◽

2011 ◽

Vol 109 (6) ◽

pp. 064101 ◽

Cited By ~ 35

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

T. Hudnall ◽

G. Bersuker ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Beryllium Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

Journal of Applied Physics ◽

10.1063/1.5008515 ◽

2018 ◽

Vol 123 (3) ◽

pp. 035101 ◽

Cited By ~ 1

Author(s):

Oren Zonensain ◽

Sivan Fadida ◽

Ilanit Fisher ◽

Juwen Gao ◽

Michal Danek ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thermal Stability Of

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Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model

Fundamentals of III-V Semiconductor MOSFETs ◽

10.1007/978-1-4419-1547-4_7 ◽

2010 ◽

pp. 173-194 ◽

Cited By ~ 4

Author(s):

Peide D. Ye ◽

Yi Xuan ◽

Yanqing Wu ◽

Min Xu

Keyword(s):

Metal Oxide ◽

Empirical Model ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

Journal of Materials Chemistry C ◽

10.1039/d0tc04725b ◽

2021 ◽

Author(s):

Dong Gun Kim ◽

Cheol Hyun An ◽

Sanghyeon Kim ◽

Dae Seon Kwon ◽

Junil Lim ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Tio2 Film ◽

Single Layer ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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