Work function tuning of plasma-enhanced atomic layer deposited WCxNyelectrodes for metal/oxide/semiconductor devices

2015 ◽  
Vol 106 (8) ◽  
pp. 082107 ◽  
Author(s):  
Oren Zonensain ◽  
Sivan Fadida ◽  
Ilanit Fisher ◽  
Juwen Gao ◽  
Kaushik Chattopadhyay ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Work Function Tuning

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

2005 ◽  
Vol 86 (9) ◽  
pp. 092107 ◽  
Author(s):  
Hyundoek Yang ◽  
Yunik Son ◽  
Sungkwon Baek ◽  
Hyunsang Hwang ◽  
Hajin Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document