Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

Yunyong Nam; Hee-Ok Kim; Sung Haeng Cho; Sang-Hee Ko Park

doi:10.1039/c7ra12841j

Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽

10.1039/c7ra12841j ◽

2018 ◽

Vol 8 (10) ◽

pp. 5622-5628 ◽

Cited By ~ 18

Author(s):

Yunyong Nam ◽

Hee-Ok Kim ◽

Sung Haeng Cho ◽

Sang-Hee Ko Park

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Aluminum Oxide ◽

Thin Film Transistors ◽

Hydrogen Diffusion ◽

Thin Film Transistor ◽

Atomic Layer ◽

Gate Insulator ◽

Layer Deposition ◽

Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

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Post-annealing temperature-dependent electrical properties of thin-film transistors with a ZnO channel and HfOx gate insulator deposited by atomic layer deposition

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab883f ◽

2020 ◽

Vol 35 (7) ◽

pp. 075013

Author(s):

Hyerin Lee ◽

Keonwon Beom ◽

Minju Kim ◽

Tae-Sik Yoon

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Atomic Layer ◽

Gate Insulator ◽

Temperature Dependent ◽

Post Annealing ◽

Layer Deposition ◽

Post Annealing Temperature

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Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition

Metals and Materials International ◽

10.1007/s12540-012-6020-5 ◽

2012 ◽

Vol 18 (6) ◽

pp. 1055-1060 ◽

Cited By ~ 10

Author(s):

Chang Ho Woo ◽

Cheol Hyoun Ahn ◽

Yong Hun Kwon ◽

Jae-Hee Han ◽

Hyung Koun Cho

Keyword(s):

Thin Film ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Aluminum Oxide ◽

Thin Film Transistors ◽

Atomic Layer ◽

Gate Insulator ◽

Oxide Thin Film ◽

Layer Deposition

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Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2017.12.234 ◽

2018 ◽

Vol 439 ◽

pp. 632-637 ◽

Cited By ~ 12

Author(s):

Huijin Li ◽

Dedong Han ◽

Junchen Dong ◽

Wen Yu ◽

Yi Liang ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Zno Thin Film ◽

Layer Deposition

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Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors

AIP Advances ◽

10.1063/1.5126151 ◽

2020 ◽

Vol 10 (1) ◽

pp. 015239

Author(s):

Wan-Ho Choi ◽

MinJung Kim ◽

Woojin Jeon ◽

Jin-Seong Park

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Gate Insulator ◽

Layer Deposition ◽

High K ◽

Interface Characteristics

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Effects of Oxidants on the Bias-Stress Instabilities of In-Ga-Zn-O Thin Film Transistors Using HfO2 Gate Insulator Prepared by Atomic Layer Deposition

IEEE Electron Device Letters ◽

10.1109/led.2020.2970751 ◽

2020 ◽

Vol 41 (3) ◽

pp. 425-428 ◽

Cited By ~ 1

Author(s):

Se-Na Choi ◽

Sung-Min Yoon

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Gate Insulator ◽

Bias Stress ◽

Layer Deposition

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Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4982224 ◽

2017 ◽

Vol 35 (3) ◽

pp. 031510 ◽

Cited By ~ 3

Author(s):

Hanearl Jung ◽

Il-Kwon Oh ◽

Seungmin Yeo ◽

Hyungjun Kim ◽

Su Jeong Lee ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

Atomic Layer ◽

Growth Characteristics ◽

Oxide Thin Film ◽

Pulsed Plasma ◽

Layer Deposition

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The Electrical Properties of Atomic Layer Deposition ZnO:N Thin Film Transistors Exposed with Ultraviolet

ECS Meeting Abstracts ◽

10.1149/ma2010-02/29/1790 ◽

2010 ◽

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Layer Deposition

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Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors

Metals and Materials International ◽

10.1007/s12540-010-1214-1 ◽

2010 ◽

Vol 16 (6) ◽

pp. 953-958 ◽

Cited By ~ 8

Author(s):

Su Cheol Gong ◽

Seokhwan Bang ◽

Hyeongtag Jeon ◽

Hyung-Ho Park ◽

Young Chul Chang ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Zno Films ◽

Layer Deposition ◽

Structural And Electrical Properties

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Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

Solid State Phenomena - Advances in Nanomaterials and Processing ◽

10.4028/3-908451-31-0.247 ◽

2007 ◽

pp. 247-250

Author(s):

Won Jun Lee ◽

Min Ho Chun ◽

Kwang Su Cheong ◽

Kwang Chol Park ◽

Chong Ook Park ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Gate Insulator ◽

Layer Deposition

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HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

Thin Solid Films ◽

10.1016/j.tsf.2006.10.083 ◽

2007 ◽

Vol 515 (12) ◽

pp. 5109-5112 ◽

Cited By ~ 4

Author(s):

S.-W. Jeong ◽

H.J. Lee ◽

K.S. Kim ◽

M.T. You ◽

Y. Roh ◽

...

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Gate Insulator ◽

Layer Deposition

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