scholarly journals Current-mode deep level transient spectroscopy of a semiconductor nanowire field-effect transistor

2017 ◽  
Vol 122 (9) ◽  
pp. 094305 ◽  
Author(s):  
Ivan Isakov ◽  
Marion J. L. Sourribes ◽  
Paul A. Warburton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Deep Level ◽  
Current Mode ◽  
Semiconductor Nanowire ◽  
Effect Transistor ◽  
Transient Spectroscopy

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 436-439 ◽  
Author(s):  
Sebastian Roensch ◽  
Stefan Hertel ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Drain Current ◽  
Evaluation Procedure ◽  
Defect Centers ◽  
Effect Transistor ◽  
Transient Spectroscopy

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

Defect levels in Cu2ZnSn(SxSe1−x)4 solar cells probed by current-mode deep level transient spectroscopy

2014 ◽  
Vol 104 (19) ◽  
pp. 192106 ◽  
Author(s):  
Sandip Das ◽  
Sandeep K. Chaudhuri ◽  
Raghu N. Bhattacharya ◽  
Krishna C. Mandal
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Current Mode ◽  
Defect Levels ◽  
Transient Spectroscopy
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