Defect levels in Cu2ZnSn(SxSe1−x)4 solar cells probed by current-mode deep level transient spectroscopy

2014 ◽  
Vol 104 (19) ◽  
pp. 192106 ◽  
Author(s):  
Sandip Das ◽  
Sandeep K. Chaudhuri ◽  
Raghu N. Bhattacharya ◽  
Krishna C. Mandal
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Current Mode ◽  
Defect Levels ◽  
Transient Spectroscopy

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

Probing the trap states in N–i–P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy

2020 ◽  
Vol 153 (12) ◽  
pp. 124703
Author(s):  
Weitao Lian ◽  
Rongfeng Tang ◽  
Yuyuan Ma ◽  
Chunyan Wu ◽  
Chao Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Trap States ◽  
Transient Spectroscopy
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