Deep levels and DX centers in AlxGa1−xAs/GaAs. II. Field effect deep level transient spectroscopy study

1992 ◽  
Vol 10 (1) ◽  
pp. 94 ◽  
Author(s):  
N. C. Halder
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Deep Level ◽  
Deep Levels ◽  
Spectroscopy Study ◽  
Dx Centers ◽  
Transient Spectroscopy

Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Yuri A. Stotski ◽  
Igor O. Usov ◽  
Alexander V. Suvorov
Keyword(s):  
High Temperature ◽  
Carrier Concentration ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Epitaxial Layers ◽  
Spectroscopy Study ◽  
Four Levels ◽  
Transient Spectroscopy ◽  
The Relationship

AbstractDeep levels in 6H-SiC wafers implanted with Al+ ions at high-temperature were studied using current deep level transient spectroscopy (iDLTS). Aluminum was implanted at a temperature of 1800 °C with an energy of 40 keV and a dose of 2 × 1016 cm−2 into n-type epitaxial layers with different carrier concentration. Four levels were found, at Ec−0.12, Ec−0.13, Ec−1.06 and Ev+0.35 eV. It was established that modification of the carrier concentration in original ntype 6H-SiC epitaxial layers affects the deep levels concentration. The relationship between the thickness of the space charge region and the relative deep level concentration was considered.

Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes

2004 ◽  
Author(s):  
Souvick Mitra ◽  
Mulpuri V. Rao ◽  
N. Papanicolaou ◽  
K. A. Jones ◽  
M. Derenge
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy
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