Energy splitting of the EL2 level in Si‐implanted GaAs/GaAs by field‐effect deep‐level transient spectroscopy

1993 ◽  
Vol 73 (3) ◽  
pp. 1309-1314 ◽  
Author(s):  
N. C. Halder ◽  
V. Misra
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Deep Level ◽  
Energy Splitting ◽  
Transient Spectroscopy

Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device Simulation

2020 ◽  
Vol 1004 ◽  
pp. 627-634 ◽  
Author(s):  
Kohei Yamasue ◽  
Yuji Yamagishi ◽  
Yasuo Cho
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Device Simulation ◽  
Oxide Semiconductor ◽  
Field Effect Mobility ◽  
Interface Defect ◽  
Transient Spectroscopy ◽  
The Impact

It has recently been shown that interface defect density (Dit) at SiO2/SiC interfaces can have non-uniform clustered distribution through the measurement by local deep level transient spectroscopy (local DLTS). Here we investigate the influence of the non-uniform Dit clustering on the field-effect mobility in SiC metal-oxide-semiconductor field effect transistors (MOSFETs) by device simulation. We develop a three dimensional numerical model of a SiC MOSFET, which can incorporate actual Dit distributions measured by local DLTS. Our main result is that the impact of the non-uniform Dit clustering on field-effect mobility is negligible for a SiC MOSFET with high Dit formed by dry thermal oxidation but it becomes significant for that with lower Dit by post-oxidation annealing. The result indicates that channel mobility can be further improved by making Dit distribution uniform as well as reducing Dit.

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