Lateral photovoltaic effect in p-type silicon induced by surface states

2017 ◽  
Vol 110 (12) ◽  
pp. 121103 ◽  
Author(s):  
Xu Huang ◽  
Chunlian Mei ◽  
Zhikai Gan ◽  
Peiqi Zhou ◽  
Hui Wang
Keyword(s):  
Photovoltaic Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type

Laser-Tuned Large Photo Hall Effect in p-Type Silicon Based on Surface States

2020 ◽  
Vol 2 (4) ◽  
pp. 906-912
Author(s):  
Diyuan Zheng ◽  
Xinyuan Dong ◽  
Jing Lu ◽  
Anhua Dong ◽  
Yiru Niu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type ◽  
Silicon Based

Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

2008 ◽  
Vol 34 (3) ◽  
pp. 241-243 ◽  
Author(s):  
N. N. Zaveryukhina ◽  
E. B. Zaveryukhina ◽  
S. I. Vlasov ◽  
B. N. Zaveryukhin
Keyword(s):  
Energy Spectrum ◽  
Single Crystals ◽  
Surface States ◽  
Type Silicon ◽  
P Type

Sensitive Photodetection Based on the Surface States of P-type Silicon

2017 ◽  
pp. 1-1 ◽  
Author(s):  
Bowei Zhou ◽  
Zhikai Gan ◽  
Anhua Dong ◽  
Sipei Wang ◽  
Hui Wang
Keyword(s):  
Surface States ◽  
Type Silicon ◽  
P Type

scholarly journals Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

2013 ◽  
Vol 34 (6) ◽  
pp. 1845-1847 ◽  
Author(s):  
Seung-Hoon Lee ◽  
Muncheol Shin ◽  
Seongpil Hwang ◽  
Sung Heum Park ◽  
Jae-Won Jang
Keyword(s):  
Photovoltaic Effect ◽  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

Lateral photovoltaic effect in nitrogen‐implanted p‐type silicon

1972 ◽  
Vol 21 (9) ◽  
pp. 423-424 ◽  
Author(s):  
Hirohiku Niu ◽  
Tetsuro Matsuda ◽  
Kenji Yamauchi ◽  
Munezo Takai
Keyword(s):  
Photovoltaic Effect ◽  
Type Silicon ◽  
P Type

The Lateral Photovoltaic Effect in the Fe/SiO2/ Si Structure with Different Silicon Conductivity Type

2018 ◽  
Vol 386 ◽  
pp. 137-142
Author(s):  
Tatiana A. Pisarenko ◽  
Vyacheslav V. Balashev ◽  
Vladimir V. Korobtsov ◽  
Artem A. Dimitriev ◽  
Victor A. Vikulov
Keyword(s):  
Response Time ◽  
Opposite Direction ◽  
Photovoltaic Effect ◽  
Inversion Layer ◽  
Light Spot ◽  
Electrical Field ◽  
Type Silicon ◽  
Conductivity Type ◽  
P Type

We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO2/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO2/n-Si and Fe/SiO2/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO2/Si interface. It was found that the response time in the Fe/SiO2/n-Si structure is 4.2 times faster than in the Fe/SiO2/p-Si structure due to the presence of an inversion layer in this structure.

Band-Bending Effects on Field Electron Emission From N- and P-Type Silicon Gated Emitter Tips

1999 ◽  
Vol 558 ◽  
Author(s):  
T. Matsukawa ◽  
K. Tokunaga ◽  
S. Kanemaru ◽  
J. Itoh
Keyword(s):  
Field Emission ◽  
Potential Barrier ◽  
Device Simulation ◽  
Surface States ◽  
Emission Characteristics ◽  
Band Bending ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTField emission characteristics from n- and p-type silicon gated emitter tips have been investigated in detail by means of experiments and theoretical estimation of band-bending induced by surface states. Single-tip emitters have been fabricated from n- and p-type silicon and their current-voltage characteristics have been evaluated. The field emission from the p-type emitter has been found to occur at lower extraction voltage than that of the n-type emitter. As the theoretical approach to the origin of the phenomena, potential distribution in the emitter tips has been calculated by using device simulation technique. The surface states of the n-type emitter tip are negatively charged and form a potential barrier against the electrons. On the contrary, there is no potential barrier in the p-type tips. The potential barrier in the n-type tip prevents electrons from reaching the tip apex. This is the reason why the emission current of the n-type emitter was suppressed lower than that of the p-type emitter.

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