Lateral photovoltaic effect in nitrogen‐implanted p‐type silicon

1972 ◽  
Vol 21 (9) ◽  
pp. 423-424 ◽  
Author(s):  
Hirohiku Niu ◽  
Tetsuro Matsuda ◽  
Kenji Yamauchi ◽  
Munezo Takai
Keyword(s):  
Photovoltaic Effect ◽  
Type Silicon ◽  
P Type

Lateral photovoltaic effect in p-type silicon induced by surface states

2017 ◽  
Vol 110 (12) ◽  
pp. 121103 ◽  
Author(s):  
Xu Huang ◽  
Chunlian Mei ◽  
Zhikai Gan ◽  
Peiqi Zhou ◽  
Hui Wang
Keyword(s):  
Photovoltaic Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type

scholarly journals Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

2013 ◽  
Vol 34 (6) ◽  
pp. 1845-1847 ◽  
Author(s):  
Seung-Hoon Lee ◽  
Muncheol Shin ◽  
Seongpil Hwang ◽  
Sung Heum Park ◽  
Jae-Won Jang
Keyword(s):  
Photovoltaic Effect ◽  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

The Lateral Photovoltaic Effect in the Fe/SiO2/ Si Structure with Different Silicon Conductivity Type

2018 ◽  
Vol 386 ◽  
pp. 137-142
Author(s):  
Tatiana A. Pisarenko ◽  
Vyacheslav V. Balashev ◽  
Vladimir V. Korobtsov ◽  
Artem A. Dimitriev ◽  
Victor A. Vikulov
Keyword(s):  
Response Time ◽  
Opposite Direction ◽  
Photovoltaic Effect ◽  
Inversion Layer ◽  
Light Spot ◽  
Electrical Field ◽  
Type Silicon ◽  
Conductivity Type ◽  
P Type

We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO2/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO2/n-Si and Fe/SiO2/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO2/Si interface. It was found that the response time in the Fe/SiO2/n-Si structure is 4.2 times faster than in the Fe/SiO2/p-Si structure due to the presence of an inversion layer in this structure.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type

Radiation damage in p-type silicon irradiated with neutrons and protons

2009 ◽  
Vol 599 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Vladimir Cindro ◽  
Gregor Kramberger ◽  
Manuel Lozano ◽  
Igor Mandić ◽  
Marko Mikuž ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Type Silicon ◽  
P Type

Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

2015 ◽  
Vol 3 (24) ◽  
pp. 6307-6313 ◽  
Author(s):  
Chao Xie ◽  
Fangze Li ◽  
Longhui Zeng ◽  
Linbao Luo ◽  
Li Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Fast Speed ◽  
Type Silicon ◽  
P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

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