Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)

2017 ◽  
Vol 146 (5) ◽  
pp. 052820 ◽  
Author(s):  
Mary Edmonds ◽  
Kasra Sardashti ◽  
Steven Wolf ◽  
Evgueni Chagarov ◽  
Max Clemons ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diffusion Barrier ◽  
Passivation Layer ◽  
Interfacial Diffusion ◽  
Interface Passivation

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC02 ◽  
Author(s):  
Antonio T. Lucero ◽  
Young-Chul Byun ◽  
Xiaoye Qin ◽  
Lanxia Cheng ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Passivation Layer ◽  
X Ray ◽  
Interface Passivation

Silicon Oxide Composite Film Fabricated by Wet Process at Low Temperature as a Passivation Layer for Printable Electric Device

2008 ◽  
Vol 1113 ◽  
Author(s):  
Sei Uemura ◽  
Kouji Suemori ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Composite Film ◽  
Silicon Oxide ◽  
Low Cost ◽  
Passivation Layer ◽  
Large Area ◽  
Passivation Film ◽  
Wet Process ◽  
Electric Device

ABSTRACTPrintable devices have been attracting considerable interest because of their application to flexible large-area devices in low cost printable electronics. In order to fabricate such devices, it is necessary to discover a passivation film and develop an efficient process for its preparation. We have previously reported that silicone oxide film is obtained with high density by UV irradiation to silazane compound film at low temperature [1]. The silicon oxide film has electric resistivity more than 10−15 Ωcm and electric strength more than 7 MV/cm. In order to apply the film to passivation layer in printable device, in this paper, preparation of nano-composite film with silicon oxide and clay mineral was investigated.

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