Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Souvik Kundu; T. Shripathi; P. Banerji

doi:10.1016/j.ssc.2011.09.033

Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Solid State Communications ◽

10.1016/j.ssc.2011.09.033 ◽

2011 ◽

Vol 151 (24) ◽

pp. 1881-1884 ◽

Cited By ~ 25

Author(s):

Souvik Kundu ◽

T. Shripathi ◽

P. Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Engineering ◽

Interface Passivation

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Metal-Oxide-Semiconductor Devices on GaAs with High-k Dielectric and MOCVD Grown ZnO Interface Passivation Layer

2011 International Conference on Nanoscience, Technology and Societal Implications ◽

10.1109/nstsi.2011.6111800 ◽

2011 ◽

Cited By ~ 1

Author(s):

Souvik Kundu ◽

Pallab Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric ◽

Interface Passivation

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Cited By ~ 12

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Interface engineering for Ge metal-oxide–semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2006.11.129 ◽

2007 ◽

Vol 515 (16) ◽

pp. 6337-6343 ◽

Cited By ~ 77

Author(s):

A. Dimoulas ◽

D.P. Brunco ◽

S. Ferrari ◽

J.W. Seo ◽

Y. Panayiotatos ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Engineering

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2917823 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202908 ◽

Cited By ~ 10

Author(s):

InJo Ok ◽

H. Kim ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Material Properties ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Substrate Orientation ◽

Interface Passivation ◽

Silicon Interface

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.3074298 ◽

2009 ◽

Vol 12 (4) ◽

pp. H131 ◽

Cited By ~ 5

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Passivation ◽

Silicon Interface

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Optimization of electrical characteristics of gadolinium (Gd[sub 2]O[sub 3]) incorporated HfO[sub 2] GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2890708 ◽

2008 ◽

Vol 26 (2) ◽

pp. 624 ◽

Cited By ~ 4

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface

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Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2164327 ◽

2006 ◽

Vol 88 (2) ◽

pp. 022106 ◽

Cited By ~ 176

Author(s):

S. Koveshnikov ◽

W. Tsai ◽

I. Ok ◽

J. C. Lee ◽

V. Torkanov ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

Interface Passivation ◽

Silicon Interface

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Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.16934 ◽

2020 ◽

Vol 20 (2) ◽

pp. 1039-1045

Author(s):

Kumar Mallem ◽

S. V. Jagadeesh Chandra ◽

Minkyu Ju ◽

Subhajith Dutta ◽

CH. V. V. Ramana ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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