scholarly journals S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities

2016 ◽  
Vol 120 (22) ◽  
pp. 224503 ◽  
Author(s):  
Saurabh V. Suryavanshi ◽  
Eric Pop
Author(s):  
Tomokazu Nakai

Abstract Currently many methods are available to obtain a junction profile of semiconductor devices, but the conventional methods have drawbacks, and they could be obstacles for junction profile analysis. This paper introduces an anodic wet etching-based two-dimensional junction profiling method, which is practical, efficient, and reliable for failure analysis and electrical characteristics evaluation.


2018 ◽  
Vol 65 (10) ◽  
pp. 4282-4289 ◽  
Author(s):  
Corentin Pigot ◽  
Marc Bocquet ◽  
Fabien Gilibert ◽  
Marina Reyboz ◽  
Olga Cueto ◽  
...  

Author(s):  
Md Sakib Hasan ◽  
Mst Shamim Ara Shawkat ◽  
Sherif Amer ◽  
Syed Kamrul Islam ◽  
Nicole McFarlane ◽  
...  

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