scholarly journals Modeling Emerging Semiconductor Devices for Circuit Simulation

2020 ◽  
Author(s):  
Md Sakib Hasan ◽  
Mst Shamim Ara Shawkat ◽  
Sherif Amer ◽  
Syed Kamrul Islam ◽  
Nicole McFarlane ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Semiconductor Devices

scholarly journals INTRODUCTION INTO TCAD AND SPICE MODELING OF SEMICONDUCTOR DEVICES AND IC COMPONENTS.

2020 ◽  
Author(s):  
Konstantin Petrosyants
Keyword(s):  
Circuit Simulation ◽  
Semiconductor Devices ◽  
Model Parameters ◽  
Bulk Silicon ◽  
Electrical Measurements ◽  
Parameters Extraction ◽  
Simulation Based

Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The typical examples of TCAD and SPICE modeling of BJTs and MOSFETs fabricated by conventional silicon IC technologies are presented.

Combined Device-Circuit Simulation for Advanced Semiconductor Devices

1994 ◽  
pp. 89-107
Author(s):  
J. F. Bürgler ◽  
H. Dettmer ◽  
C. Riccobene ◽  
W. M. Coughran ◽  
W. Fichtner
Keyword(s):  
Circuit Simulation ◽  
Semiconductor Devices

Non-quasi-static Effects Simulation of Microwave Circuits based on Physical Model of Semiconductor Devices

2020 ◽  
Vol 35 (9) ◽  
pp. 992-998
Author(s):  
Ke Xu ◽  
Xing Chen ◽  
Qiang Chen
Keyword(s):  
Physical Model ◽  
Time Domain ◽  
Finite Difference Time Domain ◽  
Circuit Simulation ◽  
Semiconductor Devices ◽  
Simulation Method ◽  
Fdtd Simulation ◽  
Lumped Element ◽  
Simulation Results ◽  
Difference Time

This work explores analyzing the non-quasistatic effects of a microwave circuit by employing a physical model-based field-circuit co-simulation method. Specifically, it uses the semiconductor physical model to characterize the semiconductor devices, and simulates the lumped circuit by cooperating semiconductor physical equations into Kirchhoff’s circuit equations. Then the lumped circuit simulation is hybridized with the finite-difference time-domain (FDTD) simulation by interfacing EM (electromagnetic) field quantities with lumped-element quantities at each timestep. Taken a microwave limiter circuit as an example, the simulation results agree well with the measured results, which prove that this method can characterize non-quasi-static effects well. As a comparison, the equivalent circuit modelbased co-simulation cannot characterize the non-quasistatic effects accurately.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Comparison of ultra high resolution immersion lens CFESEM and TEM for imaging of semiconductor devices

1990 ◽  
Vol 48 (4) ◽  
pp. 622-623
Author(s):  
Terrence Reilly ◽  
Al Pelillo ◽  
Barbara Miner
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Cross Sections ◽  
Semiconductor Devices ◽  
Ion Milling ◽  
Observation Area ◽  
Transmission Electron ◽  
Milling Machines ◽  
Resolution Imaging ◽  
Electron Microscopes

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.

Nonlinear Circuit Simulation and Modeling

2018 ◽  
Author(s):  
José Carlos Pedro ◽  
David E. Root ◽  
Jianjun Xu ◽  
Luís Cótimos Nunes
Keyword(s):  
Circuit Simulation ◽  
Simulation And Modeling ◽  
Nonlinear Circuit
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