scholarly journals Electrical resistance of single-crystal magnetite (Fe3O4) under quasi-hydrostatic pressures up to 100 GPa

2016 ◽  
Vol 119 (13) ◽  
pp. 135903 ◽  
Author(s):  
Takaki Muramatsu ◽  
Lev V. Gasparov ◽  
Helmuth Berger ◽  
Russell J. Hemley ◽  
Viktor V. Struzhkin
Author(s):  
Timothy S. English ◽  
Leslie M. Phinney ◽  
Patrick E. Hopkins ◽  
Justin R. Serrano

Accurate thermal conductivity values are essential to the modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure thermal conductivity, as well as thermal conductivity itself, varies with the device materials, fabrication conditions, geometry, and operating conditions. In this study, the thermal conductivity of boron doped single-crystal silicon-on-insulator (SOI) microbridges is measured over the temperature range from 77 to 350 K. The microbridges are 4.6 mm long, 125 μm tall, and two widths, 50 or 85 μm. Measurements on the 85 μm wide microbridges are made using both steady-state electrical resistance thermometry and optical time-domain thermoreflectance. A thermal conductivity of ∼ 77 W/mK is measured for both microbridge widths at room temperature, where both experimental techniques agree. However, a discrepancy at lower temperatures is attributed to differences in the interaction volumes and in turn, material properties, probed by each technique. This finding is qualitatively explained through Boltzmann transport equation modeling under the relaxation time approximation.


Vacuum ◽  
1999 ◽  
Vol 54 (1-4) ◽  
pp. 83-87 ◽  
Author(s):  
W. Soszka ◽  
N-T.H. Kim-Ngan ◽  
D. Sitko ◽  
G. Jagło ◽  
A. Kozłowski

Pramana ◽  
2003 ◽  
Vol 61 (1) ◽  
pp. 183-186 ◽  
Author(s):  
Rajiv Vaidya ◽  
Neha Bhatt ◽  
S. G. Patel ◽  
A. R. Jani ◽  
Alka B. Garg ◽  
...  

2013 ◽  
Vol 15 (21) ◽  
pp. 8222 ◽  
Author(s):  
Chaolong Tang ◽  
Chengming Jiang ◽  
Wenqiang Lu ◽  
Jinhui Song

1947 ◽  
Vol 14 (3) ◽  
pp. A217-A224
Author(s):  
J. S. Koehler ◽  
F. Seitz

Abstract The purpose of this paper is to propose new experiments in the field of the plastic deformation of solids. A qualitatively satisfactory theory is discussed and is then used to suggest worth-while experiments. This theory assumes that plastic deformation is a result of the formation and motion of certain crystalline imperfections called dislocations. The nature and behavior of these imperfections are discussed. The origin of these imperfections and the changes produced in them during deformation are considered. Certain new experiments are then proposed. It is suggested that all of these experiments be done using single crystals in an attempt to simplify the interpretation of the experiments: (a) It is suggested that the internal friction, the electrical resistance, and the rate of creep all be measured on the same spectroscopically pure metal single crystal. These three measurements should be made at various temperatures and should be done successively on crystals of various crystallographic orientations. (b) It is also suggested that stress-strain curves be obtained on fine single-crystal wires. In this connection it has been shown in glass fibers that the stress concentrations at the cracks can be reduced in very thin fibers. (c) It is proposed that the electrical resistance and the internal friction of an ordered alloy be measured while the single-crystal specimen is subjected to a very small plastic deformation. (d) An attempt will be made to suggest an experiment which would enable the observer to “see” the dislocations.


Sign in / Sign up

Export Citation Format

Share Document