Electrical Resistance of Single-Crystal Single-Domain Chromium from 77 to 325 °K

1971 ◽  
Vol 4 (3) ◽  
pp. 988-991 ◽  
Author(s):  
W. B. Muir ◽  
J. O. Ström-Olsen
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Single Domain

Growth of high quality single‐domain single‐crystal films of PbTiO3

1994 ◽  
Vol 65 (9) ◽  
pp. 1106-1108 ◽  
Author(s):  
Z. Li ◽  
C. M. Foster ◽  
D. Guo ◽  
H. Zhang ◽  
G. R. Bai ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Domain ◽  
High Quality ◽  
Single Crystal Films ◽  
Crystal Films

Thermal Conductivity of Single-Crystal Silicon Microbridges Measured by Electrical Resistance Thermometry and Time-Domain Thermoreflectance

2012 ◽  
Author(s):  
Timothy S. English ◽  
Leslie M. Phinney ◽  
Patrick E. Hopkins ◽  
Justin R. Serrano
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Time Domain ◽  
Electrical Resistance ◽  
Microelectromechanical Systems ◽  
Single Crystal Silicon ◽  
Operating Conditions ◽  
Equation Modeling ◽  
Crystal Silicon ◽  
Resistance Thermometry

Accurate thermal conductivity values are essential to the modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure thermal conductivity, as well as thermal conductivity itself, varies with the device materials, fabrication conditions, geometry, and operating conditions. In this study, the thermal conductivity of boron doped single-crystal silicon-on-insulator (SOI) microbridges is measured over the temperature range from 77 to 350 K. The microbridges are 4.6 mm long, 125 μm tall, and two widths, 50 or 85 μm. Measurements on the 85 μm wide microbridges are made using both steady-state electrical resistance thermometry and optical time-domain thermoreflectance. A thermal conductivity of ∼ 77 W/mK is measured for both microbridge widths at room temperature, where both experimental techniques agree. However, a discrepancy at lower temperatures is attributed to differences in the interaction volumes and in turn, material properties, probed by each technique. This finding is qualitatively explained through Boltzmann transport equation modeling under the relaxation time approximation.

scholarly journals Electrical resistance of single-crystal magnetite (Fe3O4) under quasi-hydrostatic pressures up to 100 GPa

2016 ◽  
Vol 119 (13) ◽  
pp. 135903 ◽  
Author(s):  
Takaki Muramatsu ◽  
Lev V. Gasparov ◽  
Helmuth Berger ◽  
Russell J. Hemley ◽  
Viktor V. Struzhkin
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Magnetite Fe3o4

Formation of single domain state and spontaneous backswitching in SBN single crystal

2016 ◽  
Vol 496 (1) ◽  
pp. 149-156 ◽  
Author(s):  
E. A. Kolchina ◽  
M. M. Neradovskiy ◽  
V. A. Shikhova ◽  
D.V. Pelegov ◽  
V. Ya. Shur ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Domain ◽  
Single Domain State ◽  
Domain State

Single domain vs. polydomain [111] 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 single crystal. Polarization switching, dielectric and pyroelectric properties

2012 ◽  
Vol 100 (24) ◽  
pp. 242905 ◽  
Author(s):  
Matthias Dietze ◽  
Hannelore Katzke ◽  
M. Es-Souni ◽  
Norbert Neumann ◽  
Hao-Su Luo
Keyword(s):  
Single Crystal ◽  
Polarization Switching ◽  
Single Domain ◽  
Pyroelectric Properties
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