Effect of pressure on electrical resistance of WSe2 single crystal

Pramana ◽  
2003 ◽  
Vol 61 (1) ◽  
pp. 183-186 ◽  
Author(s):  
Rajiv Vaidya ◽  
Neha Bhatt ◽  
S. G. Patel ◽  
A. R. Jani ◽  
Alka B. Garg ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Effect Of Pressure ◽  
Wse2 Single Crystal

Effect of Pressure on Quenched-In Electrical Resistance in Gold and Aluminum

1969 ◽  
Vol 188 (3) ◽  
pp. 1156-1162 ◽  
Author(s):  
R. M. EMRICK ◽  
P. B. McARDLE
Keyword(s):  
Electrical Resistance ◽  
Effect Of Pressure

Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes

2012 ◽  
Vol 51 ◽  
pp. 105103 ◽  
Author(s):  
Tohru Watanabe ◽  
Fumiaki Tomioka ◽  
Satoshi Ishii ◽  
Shunsuke Tsuda ◽  
Takahide Yamaguchi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Resistance ◽  
Effect Of Pressure ◽  
Boron Doped

Thermal Conductivity of Single-Crystal Silicon Microbridges Measured by Electrical Resistance Thermometry and Time-Domain Thermoreflectance

2012 ◽  
Author(s):  
Timothy S. English ◽  
Leslie M. Phinney ◽  
Patrick E. Hopkins ◽  
Justin R. Serrano
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Time Domain ◽  
Electrical Resistance ◽  
Microelectromechanical Systems ◽  
Single Crystal Silicon ◽  
Operating Conditions ◽  
Equation Modeling ◽  
Crystal Silicon ◽  
Resistance Thermometry

Accurate thermal conductivity values are essential to the modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure thermal conductivity, as well as thermal conductivity itself, varies with the device materials, fabrication conditions, geometry, and operating conditions. In this study, the thermal conductivity of boron doped single-crystal silicon-on-insulator (SOI) microbridges is measured over the temperature range from 77 to 350 K. The microbridges are 4.6 mm long, 125 μm tall, and two widths, 50 or 85 μm. Measurements on the 85 μm wide microbridges are made using both steady-state electrical resistance thermometry and optical time-domain thermoreflectance. A thermal conductivity of ∼ 77 W/mK is measured for both microbridge widths at room temperature, where both experimental techniques agree. However, a discrepancy at lower temperatures is attributed to differences in the interaction volumes and in turn, material properties, probed by each technique. This finding is qualitatively explained through Boltzmann transport equation modeling under the relaxation time approximation.

scholarly journals Electrical resistance of single-crystal magnetite (Fe3O4) under quasi-hydrostatic pressures up to 100 GPa

2016 ◽  
Vol 119 (13) ◽  
pp. 135903 ◽  
Author(s):  
Takaki Muramatsu ◽  
Lev V. Gasparov ◽  
Helmuth Berger ◽  
Russell J. Hemley ◽  
Viktor V. Struzhkin
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Magnetite Fe3o4

Effect of pressure on crystalline L- and DL-serine: revisited by a combined single-crystal X-ray diffraction at a laboratory source and polarized Raman spectroscopy study

2012 ◽  
Vol 68 (3) ◽  
pp. 275-286 ◽  
Author(s):  
Boris A. Zakharov ◽  
Boris A. Kolesov ◽  
Elena V. Boldyreva
Keyword(s):  
Raman Spectroscopy ◽  
Hydrogen Bonds ◽  
Single Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effect Of Pressure ◽  
Laboratory Source ◽  
Compression Mechanism ◽  
Polarized Raman Spectroscopy ◽  
Polarized Raman

Information on the effect of pressure on hydrogen bonds, which could be derived from single-crystal X-ray diffraction at a laboratory source and polarized Raman spectroscopy, has been compared. L-Serine and DL-serine were selected for this case study. The role of hydrogen bonds in pressure-induced phase transitions in the first system and in the structural stability of the second one are discussed. Non-monotonic distortion of selected hydrogen bonds in the pressure range below ∼ 1–2 GPa, a change in the compression mechanism at ∼ 2–3 GPa, and the evidence of formation of bifurcated N—H...O hydrogen bonds in DL-serine at ∼ 3–4 GPa are considered.

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