Nonlinear length dependent electrical resistance of a single crystal zinc oxide micro/nanobelt

2013 ◽  
Vol 15 (21) ◽  
pp. 8222 ◽  
Author(s):  
Chaolong Tang ◽  
Chengming Jiang ◽  
Wenqiang Lu ◽  
Jinhui Song
Keyword(s):  
Zinc Oxide ◽  
Single Crystal ◽  
Electrical Resistance

Quaternary Equiatomic Compounds LnZnSbO (Ln = La - Nd, Sm) with ZrCuSiAs-Type Structure

1997 ◽  
Vol 52 (12) ◽  
pp. 1467-1470 ◽  
Author(s):  
Petra Wollesen ◽  
Joachim W. Kaiser ◽  
Wolfgang Jeitschko
Keyword(s):  
Zinc Oxide ◽  
Single Crystal ◽  
Chemical Bonding ◽  
Type Structure ◽  
Variable Parameters ◽  
X Ray ◽  
Structure Factors ◽  
Cold Pressed

Abstract The five compounds LnZnSbO (Ln = La - Nd, Sm) were prepared by annealing cold-pressed pellets of the lanthanoids, zinc oxide, and antimony, or by reacting these components in a NaCl/KCl flux. They crystallize with the tetragonal ZrCuSiAs type structure, which was refined from single-crystal X-ray data of CeZnSbO : P 4/nmm, a = 419.76(4), c = 947.4(1) pm, Z = 2, R = 0.022 for 165 structure factors and 12 variable parameters. Chemical bonding in this and the formally isotypic compound CeZn1-xSb2 is briefly discussed.

scholarly journals SIMULATION OF SINGLE CRYSTAL ONE DIMENSIONAL ZnO RODS ARRAY GROWTH PROCESS

2021 ◽  
Author(s):  
Andrey Sharapov ◽  
Igor Matyushkin
Keyword(s):  
Zinc Oxide ◽  
Single Crystal ◽  
Gas Phase ◽  
Growth Process ◽  
Silicon Oxide ◽  
Phase Growth ◽  
One Dimensional ◽  
Zno Rods

In this work, the formation of zinc oxide arrows by gas-phase growth on the surface of silicon oxide is simulated.

Thermal Conductivity of Single-Crystal Silicon Microbridges Measured by Electrical Resistance Thermometry and Time-Domain Thermoreflectance

2012 ◽  
Author(s):  
Timothy S. English ◽  
Leslie M. Phinney ◽  
Patrick E. Hopkins ◽  
Justin R. Serrano
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Time Domain ◽  
Electrical Resistance ◽  
Microelectromechanical Systems ◽  
Single Crystal Silicon ◽  
Operating Conditions ◽  
Equation Modeling ◽  
Crystal Silicon ◽  
Resistance Thermometry

Accurate thermal conductivity values are essential to the modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure thermal conductivity, as well as thermal conductivity itself, varies with the device materials, fabrication conditions, geometry, and operating conditions. In this study, the thermal conductivity of boron doped single-crystal silicon-on-insulator (SOI) microbridges is measured over the temperature range from 77 to 350 K. The microbridges are 4.6 mm long, 125 μm tall, and two widths, 50 or 85 μm. Measurements on the 85 μm wide microbridges are made using both steady-state electrical resistance thermometry and optical time-domain thermoreflectance. A thermal conductivity of ∼ 77 W/mK is measured for both microbridge widths at room temperature, where both experimental techniques agree. However, a discrepancy at lower temperatures is attributed to differences in the interaction volumes and in turn, material properties, probed by each technique. This finding is qualitatively explained through Boltzmann transport equation modeling under the relaxation time approximation.

scholarly journals Diffusion of indium in single crystal zinc oxide: a comparison between group III donors

2019 ◽  
Vol 34 (2) ◽  
pp. 025011
Author(s):  
T N Sky ◽  
K M Johansen ◽  
Y K Frodason ◽  
T Aarholt ◽  
H N Riise ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Single Crystal ◽  
Group Iii
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