Effect of elastic uniaxial strain on the electrical resistance of In2Bi single‐crystal whiskers

1975 ◽  
Vol 46 (6) ◽  
pp. 2806-2807
Author(s):  
William S. Key ◽  
Jack Hayne Davis
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Uniaxial Strain

Thermal Conductivity of Single-Crystal Silicon Microbridges Measured by Electrical Resistance Thermometry and Time-Domain Thermoreflectance

2012 ◽  
Author(s):  
Timothy S. English ◽  
Leslie M. Phinney ◽  
Patrick E. Hopkins ◽  
Justin R. Serrano
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Time Domain ◽  
Electrical Resistance ◽  
Microelectromechanical Systems ◽  
Single Crystal Silicon ◽  
Operating Conditions ◽  
Equation Modeling ◽  
Crystal Silicon ◽  
Resistance Thermometry

Accurate thermal conductivity values are essential to the modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure thermal conductivity, as well as thermal conductivity itself, varies with the device materials, fabrication conditions, geometry, and operating conditions. In this study, the thermal conductivity of boron doped single-crystal silicon-on-insulator (SOI) microbridges is measured over the temperature range from 77 to 350 K. The microbridges are 4.6 mm long, 125 μm tall, and two widths, 50 or 85 μm. Measurements on the 85 μm wide microbridges are made using both steady-state electrical resistance thermometry and optical time-domain thermoreflectance. A thermal conductivity of ∼ 77 W/mK is measured for both microbridge widths at room temperature, where both experimental techniques agree. However, a discrepancy at lower temperatures is attributed to differences in the interaction volumes and in turn, material properties, probed by each technique. This finding is qualitatively explained through Boltzmann transport equation modeling under the relaxation time approximation.

scholarly journals Electrical resistance of single-crystal magnetite (Fe3O4) under quasi-hydrostatic pressures up to 100 GPa

2016 ◽  
Vol 119 (13) ◽  
pp. 135903 ◽  
Author(s):  
Takaki Muramatsu ◽  
Lev V. Gasparov ◽  
Helmuth Berger ◽  
Russell J. Hemley ◽  
Viktor V. Struzhkin
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Magnetite Fe3o4

scholarly journals A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments

2015 ◽  
Vol 86 (10) ◽  
pp. 103904 ◽  
Author(s):  
L. Gannon ◽  
A. Bosak ◽  
R. G. Burkovsky ◽  
G. Nisbet ◽  
A. P. Petrović ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Uniaxial Strain

Effect of pressure on electrical resistance of WSe2 single crystal

Pramana ◽  
2003 ◽  
Vol 61 (1) ◽  
pp. 183-186 ◽  
Author(s):  
Rajiv Vaidya ◽  
Neha Bhatt ◽  
S. G. Patel ◽  
A. R. Jani ◽  
Alka B. Garg ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrical Resistance ◽  
Effect Of Pressure ◽  
Wse2 Single Crystal

TENSILE FAILURE OF SINGLE-CRYSTAL AND NANOCRYSTALLINE LENNARD-JONES SOLIDS UNDER UNIAXIAL STRAIN

2006 ◽  
Vol 17 (11) ◽  
pp. 1551-1561 ◽  
Author(s):  
SHENG-NIAN LUO ◽  
LIANQING ZHENG ◽  
QI AN ◽  
SHIJIN ZHAO
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Void Nucleation ◽  
Void Formation ◽  
Stacking Faults ◽  
Uniaxial Strain ◽  
Tensile Failure ◽  
Void Size ◽  
Lennard Jones ◽  
Critical Void

We investigate using molecular dynamics, the tensile failure of single-crystal and nanocrystalline Lennard-Jones solids under uniaxial strain. Stresses are relaxed by plasticity and tensile failure, which are induced via stacking faults, twin planes, void nucleation and growth, and their interactions. Stacking faults and twin planes as well as multiple nanovoids are nucleated at grain boundaries in a nanocrystalline solid. Void formation is characterized by under-coordinated atoms with coordination number ≤ 7, and the critical void size is comparable to a vacancy. For a single crystal, the number of stacking faults and twin planes decreases during failure mostly due to the absorption by nanovoids. In contrast, it increases with strain monotonically for a nanocrystalline solid, where abundant grain boundaries help the nucleation and deter the propagation and absorption of the stacking faults and twin planes, inducing effective dislocation pile-ups at grain boundaries even in the presence of nanovoids.

Nonlinear length dependent electrical resistance of a single crystal zinc oxide micro/nanobelt

2013 ◽  
Vol 15 (21) ◽  
pp. 8222 ◽  
Author(s):  
Chaolong Tang ◽  
Chengming Jiang ◽  
Wenqiang Lu ◽  
Jinhui Song
Keyword(s):  
Zinc Oxide ◽  
Single Crystal ◽  
Electrical Resistance
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