Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

2016 ◽  
Vol 119 (9) ◽  
pp. 094303 ◽  
Author(s):  
H. S. Alkhaldi ◽  
F. Kremer ◽  
T. Bierschenk ◽  
J. L. Hansen ◽  
A. Nylandsted-Larsen ◽  
...  
Keyword(s):  
Implantation Temperature

Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

2005 ◽  
Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela
Keyword(s):  
Tribological Properties ◽  
Low Energy ◽  
Temperature Dependent ◽  
Structural Modifications ◽  
Nanocomposite Layer ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

Implantation of Nitrogen into Ti/Al, Ni/Ti, and Ni/Al Bilayers

1991 ◽  
Vol 235 ◽  
Author(s):  
D. O. Boerma ◽  
T. Corts
Keyword(s):  
Nuclear Reaction Analysis ◽  
Si Substrate ◽  
Major Fraction ◽  
High Chemical ◽  
Gaussian Shape ◽  
Depth Profiles ◽  
Implantation Temperature ◽  
Projected Range ◽  
A Minor ◽  
Metal Layers

ABSTRACTTi/Al, Ni/Ti, and Ni/Al bilayers were produced by evaporation on a Si substrate. The thicknesses of the composing layers were in the 50–200 nm range. The as-evaporated bilayers were implanted with doses of 0.4–2.5 · 1017 of 15N ions/cm2. The 15N energy was chosen so that the calculated projected range was either in the middle of the top Ni layer, or coincided with the interface between the metal layers. The implantation temperature was varied in the range from 25 °C to 245 °C. The 15N depth profiles as measured with nuclear reaction analysis (NRA) were found to have the expected Gaussian shape for the Ti/Al bilayers. However, in the Ni/Ti and Ni/Al layers very asymmetric 15N profiles were observed, with a major fraction of N atoms in the Ti or Al layer, and a minor fraction in the Ni layer. The N concentrations in the Al or Ti layers were found to be almost constant. A massive redistribution of N atoms must have taken place in all three metals during the implantations, to form the observed profiles. We speculate that this remarkable phenomenon, which occurs even below 80°C, can be explained by interstitial diffusion of N atoms and subsequent trapping in Ti or Al, which have a high chemical affinity for nitrogen. The N atoms remaining in the Ni layer after implantation were found to migrate out of this layer during annealing at temperatures ≥250°C.

Elevated Temperature Implantation of GaAs with Si Ions.

1996 ◽  
Vol 438 ◽  
Author(s):  
R. A. Brown ◽  
J. S. Williams
Keyword(s):  
Elevated Temperatures ◽  
Amorphous Layer ◽  
Ion Flux ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Residual Damage ◽  
Radiation Induced ◽  
Small Clusters ◽  
Induced Defects

AbstractThe formation of amorphous layers in GaAs during ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, is shown to be extremely sensitive to the ion flux, fluence, and implantation temperature. For example, with increasing fluence, damage can first build up extremely slowly, then suddenly collapse to the amorphous phase. Alternatively, for a constant ion fluence, a change in flux by one order of magnitude can change the critical temperature for amorphisation by 27°C, and at constant flux and fluence, a change of only 6°C can alter the residual damage from small clusters barely visible by conventional transmission electron microscopy and Rutherford backscattering to a thick amorphous layer. The temperature at which this occurs is strongly dependent upon the ion flux and fluence.

scholarly journals The study of thermoregulatory behavior of reptiles by of implantation temperature recorders

2016 ◽  
pp. 69-76
Author(s):  
Nikolay A. Litvinov ◽  
◽  
Maria K. Panova ◽  
Gennadiy A. Okulov ◽  
◽  
...  
Keyword(s):  
Thermoregulatory Behavior ◽  
Implantation Temperature

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

Implantation temperature effect on polycrystalline silicon by ion shower doping

1993 ◽  
Vol 74 (12) ◽  
pp. 7114-7117 ◽  
Author(s):  
Y. Mishima ◽  
M. Takei ◽  
N. Matsumoto ◽  
T. Uematsu
Keyword(s):  
Temperature Effect ◽  
Polycrystalline Silicon ◽  
Implantation Temperature

Dependence of Buried CoSi2 Resistivity on ION Implantation and Annealing Conditions1

1991 ◽  
Vol 235 ◽  
Author(s):  
Fereydoon Namavar ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
L. Luo ◽  
J. T. McGinn
Keyword(s):  
Electrical Resistivity ◽  
Ion Implantation ◽  
Material Properties ◽  
Crystalline Quality ◽  
Cobalt Disilicide ◽  
Implantation Temperature ◽  
Annealing Conditions

ABSTRACTWe have investigated the dependence of electrical and material properties of buried CoSi2 layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi2 layers depend strongly on the implantation temperature. CoSi2 layers with the lowest resistivity and best crystalline quality (Xmin as low as 3.6%) were obtained from samples implanted at 300°C-400°C. Implantation at higher temperatures (e.g., 580°C) produced cobalt disilicide layers with significantly higher electrical resistivity and a Xmin of about 10.7%.

Sign in / Sign up

Export Citation Format

Share Document