First-principles study of resistive random access memory based on single-layer black phosphorous resistive layer

2020 ◽  
Vol 128 (21) ◽  
pp. 215702
Author(s):  
Yuehua Dai ◽  
Jianhua Gao ◽  
Lihua Huang ◽  
Renjie Ding ◽  
Peng Wang ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Single Layer ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Layer ◽  
First Principles Study ◽  
Black Phosphorous

scholarly journals Models Comparison And Validation With the Experimental Nano- Scale Silicon Substrate Based Annealed Pt/HfO2/Pt Resistive Random Access Memory Cell

2021 ◽  
Author(s):  
Napolean A ◽  
Sivamangai NM ◽  
Nithya N ◽  
Naveenkumar R
Keyword(s):  
Silicon Substrate ◽  
Random Access ◽  
Single Layer ◽  
Memory Cell ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Experimental Result ◽  
Access Memory ◽  
Novel Device ◽  
Models Comparison

Abstract Metal oxide resistive random access memory (RRAM) is a novel device that provides an alternate solution for existing CMOS memory devices. In RRAM, correlate the experimental result with a simulated result by a unique model is a critical task. This work focused on the validation of silicon substrate-based fabricated single layer annealed and electroformed at 80oC ambient temperature (A-80) RRAM cell. The experimental result concludes that the proposed Pt/HfO2/Pt device provides the forming voltage of 3.8 V, Vset = 1.7 V, and Vreset=-0.8 V. Switching results are compared with the simulated result which is working based on non-linear ion drift, Yakopcic and voltage threshold adaptive memristor (VTEAM) models. VTEAM model gives a closure relationship with experimental data and well suited for our fabricated device. Further, the VTEAM model is modified to contribute accurate results and one of the standard model metrics, accuracy is analysed for a modified VTEAM model. Statistical analysis proves that, the mean error percentage of modified VTEAM and VTEAM models against experimental outcomes are 21.4% and 25.3 % respectively

Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

2016 ◽  
Vol 26 (12) ◽  
pp. 2016-2024 ◽  
Author(s):  
Chunxue Hao ◽  
Fusheng Wen ◽  
Jianyong Xiang ◽  
Shijun Yuan ◽  
Bingchao Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Black Phosphorous ◽  
Memory Applications

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3367-3372 ◽  
Author(s):  
Takumi Moriyama ◽  
Takahiro Yamasaki ◽  
Takahisa Ohno ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Resistive Switching ◽  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Side Surface ◽  
Resistive Random Access Memory ◽  
First Principles Calculation ◽  
Access Memory ◽  
Switching Mechanism ◽  
Conducting Path

ABSTRACTFor practical use of Resistive Random Access Memory (ReRAM), understanding resistive switching mechanism in transition metal oxides (TMO) is important. Some papers predict its mechanism by using first principles calculation; for example, TMO become conductive by introducing oxygen vacancy in bulk single crystalline TMO. However, most of ReRAM samples have polycrystalline structures. In this paper, we introduced a periodic slab model to depict grain boundary and calculated the surface energy and density of states for surfaces of NiO with various orientations using first-principles calculation to consider the effect of grain boundaries for resistive switching mechanisms of ReRAM. As a results, vacancies can be formed on the side surface of grain more easily than in grain. Moreover, we showed that surface conductivity depends on surface orientation of NiO and the orientation of side surface of grain can change easily by introduction of vacancies, which is the switching mechanism of NiO-ReRAM

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