Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications

2005 ◽  
Vol 23 (1) ◽  
pp. 80 ◽  
Author(s):  
Dongjoon Ma ◽  
Sungho Park ◽  
Bum-Seok Seo ◽  
SangJun Choi ◽  
Naesung Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Oxide Thin Film ◽  
Access Memory ◽  
High Permittivity ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Low Temperature Crystallization ◽  
Memory Applications ◽  
Temperature Crystallization

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

2011 ◽  
Vol 109 (3) ◽  
pp. 033712 ◽  
Author(s):  
Jungho Shin ◽  
Insung Kim ◽  
Kuyyadi P. Biju ◽  
Minseok Jo ◽  
Jubong Park ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Cross Point ◽  
Metal Insulator ◽  
Metal Insulator Metal

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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