Electron transport property of cobalt-centered porphyrin-armchair graphene nanoribbon (AGNR) junction

Electron Transport Parameters Study for Transition Metal-Doped Armchair Graphene Nanoribbon via Acoustical Phonon Interactions

Journal of Electronic Materials ◽

10.1007/s11664-016-5274-y ◽

2017 ◽

Vol 46 (4) ◽

pp. 2340-2346 ◽

Cited By ~ 6

Author(s):

Ankur Pandya ◽

Prafulla K. Jha

Keyword(s):

Electron Transport ◽

Transition Metal ◽

Graphene Nanoribbon ◽

Transport Parameters ◽

Metal Doped ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene ◽

Acoustical Phonon

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Fano effect and bound state in continuum in electron transport through an armchair graphene nanoribbon with line defect

Nanoscale Research Letters ◽

10.1186/1556-276x-8-330 ◽

2013 ◽

Vol 8 (1) ◽

Cited By ~ 19

Author(s):

Wei-Jiang Gong ◽

Xiao-Yan Sui ◽

Yan Wang ◽

Guo-Dong Yu ◽

Xiao-Hui Chen

Keyword(s):

Electron Transport ◽

Bound State ◽

Graphene Nanoribbon ◽

Line Defect ◽

Fano Effect ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

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Electronic structure, strain effects and transport property of armchair graphene nanoribbon with variously possible edge oxidation

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab3888 ◽

2019 ◽

Vol 52 (47) ◽

pp. 475301

Author(s):

T Zhao ◽

Z Q Fan ◽

Z H Zhang ◽

R L Zhou

Keyword(s):

Electronic Structure ◽

Transport Property ◽

Graphene Nanoribbon ◽

Strain Effects ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

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Fano effects in electron transport through an armchair graphene nanoribbon with one line defect

Journal of Applied Physics ◽

10.1063/1.4811438 ◽

2013 ◽

Vol 113 (23) ◽

pp. 233701 ◽

Cited By ~ 1

Author(s):

Yu Han ◽

Xiao-Yan Sui ◽

Wei-Jiang Gong

Keyword(s):

Electron Transport ◽

Graphene Nanoribbon ◽

Line Defect ◽

Fano Effects ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

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Spin-Dependent Electron Transport in an Armchair Graphene Nanoribbon Subject to Charge and Spin Biases

Chinese Physics Letters ◽

10.1088/0256-307x/30/1/017201 ◽

2013 ◽

Vol 30 (1) ◽

pp. 017201 ◽

Cited By ~ 2

Author(s):

Xiao-Wei Zhang ◽

Hua Zhao ◽

Tian Sang ◽

Xiao-Chun Liu ◽

Tuo Cai

Keyword(s):

Electron Transport ◽

Graphene Nanoribbon ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

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Improvement of the electronic and transport properties of hybrid bilayer armchair graphene nanoribbon by chemical derivation and out-layer strain: A first principles calculations

Diamond and Related Materials ◽

10.1016/j.diamond.2021.108282 ◽

2021 ◽

Vol 114 ◽

pp. 108282

Author(s):

Nam-Chol Ri ◽

Jong-Chol Kim ◽

Su-Il Ri

Keyword(s):

Transport Properties ◽

First Principles ◽

Graphene Nanoribbon ◽

First Principles Calculations ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

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First-principles study of Ir-doped armchair graphene Nanoribbon: For potential nanodevice applications

Materials Today Proceedings ◽

10.1016/j.matpr.2021.02.107 ◽

2021 ◽

Author(s):

Saurabh Kharwar ◽

Sangeeta Singh

Keyword(s):

First Principles ◽

Graphene Nanoribbon ◽

First Principles Study ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

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Numerical solution of the Dirac equation for an armchair graphene nanoribbon in the presence of a transversally variable potential

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5677938 ◽

2010 ◽

Cited By ~ 3

Author(s):

P. Marconcini ◽

D. Logoteta ◽

M. Fagotti ◽

M. Macucci

Keyword(s):

Dirac Equation ◽

Numerical Solution ◽

Graphene Nanoribbon ◽

Armchair Graphene Nanoribbon ◽

Variable Potential ◽

Armchair Graphene

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Electron Tunneling Current in an n-p-n Bipolar Transistor Based on Armchair Graphene Nanoribbon by Using Airy-Wavefunction Approach

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1112.80 ◽

2015 ◽

Vol 1112 ◽

pp. 80-84

Author(s):

Fatimah A. Noor ◽

Rifky Syariati ◽

Endi Suhendi ◽

Mikrajuddin Abdullah ◽

Khairurrijal

Keyword(s):

Electron Tunneling ◽

Tunneling Current ◽

Band Gap Energy ◽

Graphene Nanoribbon ◽

Bipolar Transistor ◽

Electron Effective Mass ◽

Collector Voltage ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene ◽

Emitter Voltage

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and the obtained transmittance is then used to obtain the tunneling current. The tunneling current is calculated for various variables such as base-emitter voltage, base-current voltage, and AGNR width. It is found that the tunneling current increases with increasing the base-emitter voltage or the base-collector voltage. This result is due to the lowered barrier height of the base region caused by the increase in the base-emitter voltage or the base-collector voltage. In addition, the tunneling current density increases with the width for narrow AGNR and, on the other hand, it decreases for wide AGNR. This finding might be due to the contributions of the band gap energy and the electron effective mass of AGNR which are inversely proportional to the AGNR width.

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