Design new voltage balancing control series connected for HV-IGBT`s

<span>The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of series-connected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate signal time delay. Closed-loop controls function is to charged current to the gate to restrict the IGBT emitter voltage to a predetermined level. This paper also presents the experiment on the gate driver capability based on a series-connected IGBTs with three IGBTs and a snubber circuit. The experimental results show a voltage offset with active control with a wide variation in load and imbalance conditions. Lastly, the experimental results are validated with the simulation results, where the simulation results agree with the experimental results.</span>

Development of Analog Behavioural Model of BiMOSFET

Behavioural modelling of a power semiconductor device offers many advantages to an application engineer as it is possible to model the device from the available datasheet without a detailed knowledge of the fabrication process. The development of an analog behavioural model for a BiMOSFET is undertaken here by using the Hammerstein model. The Hammerstein model is developed with static and dynamic block sub-blocks and is designed to respond for varying temperatures.The datasheet values of Ic and Vceare utilized to derive the static linear block,while the dynamic block is modelled as Hammerstein current source.The developed model of the BiMOSFET has been verified for its terminal characteristics through OrCAD simulations and hardware testing. The developed model of BiMOSFETexhibits fast simulation times with reasonable accuracy. The hardware testing is carriedout with BiMOSFET IXBF55N300 by observing its currents and voltages under the variation of gate voltage at constant collector emitter voltage and variation of collector emitter voltage at constant gate voltage.